Silk Oxide Substitute for Humidity-Switchable Semiconductor Sensors

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Solution Overview

Problem

Existing semiconductor materials and processes are not sustainable or renewable, necessitating the development of eco-friendly and renewable materials and processes for semiconductor devices.

Innovation Solution

Integration of nanoscale silk layers in semiconductor devices to create hybrid transistors that can switch between ionic and dielectric behavior, leveraging the properties of both semiconductor and biopolymer technologies.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If traditional semiconductor materials and processes are used, then device functionality is achieved, but sustainability and renewability are compromised

Engineering Contradiction:

Improvedevice functionalityVSAvoidsustainability and renewability

Core Design Contradiction:

ReliabilityVSAdaptability or versatility

Solution Approach 1:

The patent combines traditional semiconductor materials (such as silicon) with biopolymer materials (such as silk fibroin, chitosan, or cellulose) to create composite structures. This allows the device to maintain the electrical functionality of semiconductors while incorporating the sustainability and renewability characteristics of biopolymers, thus resolving the contradiction between device functionality and environmental sustainability.

Inventive Principle:

Principle #40Composite materials

2Adaptability or versatility

If nanoscale silk layers are integrated to enable switching between ionic and dielectric behavior, then device functionality and sensitivity are enhanced, but device complexity increases

Engineering Contradiction:

Improveswitching between ionic and dielectric behaviorVSAvoidhybrid device structure

Core Design Contradiction:

Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent employs dynamic materials that can change their properties in response to environmental conditions. The nanoscale silk layers can dynamically switch between ionic and dielectric states based on hydration levels, allowing the device to adapt its behavior without requiring complex control circuits or multiple static components, thus managing complexity while enhancing functionality.

Inventive Principle:

Principle #15Dynamics

Solution Approach 2:

The patent utilizes changes in physical parameters (such as hydration state, temperature, or pH) to control the switching between ionic and dielectric behavior of the silk layers. By leveraging natural parameter-dependent transitions in biomaterials, the device achieves multi-functional behavior without requiring complex active control mechanisms, thereby reducing overall device complexity.

Inventive Principle:

Principle #35Parameter changes

3Manufacturing precision

If silk fibroin films are deposited through spin-coating to form ultrathin layers, then manufacturing precision and control are improved, but additional processing steps increase manufacturing complexity

Engineering Contradiction:

Improvefilm thickness controlVSAvoidprocessing steps

Core Design Contradiction:

Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The patent performs preliminary optimization of the spin-coating process parameters (such as solution concentration, spin speed, and drying conditions) to achieve the desired ultrathin film thickness in a single step. By pre-characterizing the relationship between processing parameters and film thickness, the method eliminates the need for multiple iterative deposition steps, thus maintaining manufacturing precision while simplifying the overall manufacturing process.

Inventive Principle:

Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enhances current flow by over six orders of magnitude and enables fast, reversible transitions between operational modes, facilitating sensitive and ultrafast breath sensing applications.

Implementation Method 1

the regenerated amphiphilic protein layer is structured to be exposed to humidity to capture H2O molecules and thereby transition from a field-effect mode to an electrolyte-gated mode

Methodology Applied

Scientific EffectHygroscopy: Absorption (physical)

Implementation Method 2

in a first hydration state of the regenerated amphiphilic protein layer, a first electrical double layer (EDL) is formed at an interface between the first layer and the regenerated amphiphilic protein layer

Methodology Applied

Scientific EffectElectrical double layer formation: Electrostatics

Data Source

PatentUS20260110660A1Use of silk as an oxide substitute in semiconductor devices and sensors, and methods of making the same

Publication Date: 2026.04.23 TRUSTEES OF TUFTS COLLEGE

AI summary

A device may include a first layer, wherein the first layer is conductive or semiconductive. A device may include a regenerated amphiphilic protein layer on the first layer, the regenerated amphiphilic protein layer structured such that: in a first hydration state of the regenerated amphiphilic protein layer, a first electrical double layer (EDL) is formed at an interface between the first layer and the regenerated amphiphilic protein layer.