Siloxane Adhesive Composition for Temporary Wafer Bonding and Debonding

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Solution Overview

Problem

Conventional adhesive compositions for semiconductor wafers fail to provide suitable temporary adhesion with resistance to stress during polishing and easy detachment, while also preventing bump deformation due to external loads like heating and pressure, and exhibit low etching rates for adhesive layer removal.

Innovation Solution

An adhesive composition containing a polyorganosiloxane component cured by hydrosilylation reaction, with a polymer having a weight average molecular weight of 60,000 or more, and a release agent component, which forms a layer that effectively adheres and debonds semiconductor substrates with bumps, suppressing deformation and facilitating high etching rates.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional adhesive compositions are used for temporary adhesion, then the semiconductor wafer can be attached to the support, but the adhesive composition cannot provide both resistance to stress during polishing and easy detachment, and exhibits low etching rates

Engineering Contradiction:
Improvetemporary adhesion performanceVSAvoidetching rate
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The patent changes the chemical composition parameters of the adhesive by incorporating specific siloxane compounds with controlled molecular weights and structures. The adhesive contains a base polymer with weight average molecular weight of 10,000-100,000 and siloxane content of 10-90 mass%, which transforms the adhesive's properties to achieve both high stress resistance during polishing and high etching rates for efficient removal.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent creates a composite adhesive material combining organic polymer components with inorganic siloxane components. This composite structure integrates the mechanical strength and adhesion properties of the polymer base with the chemical reactivity and stress resistance of siloxane groups, enabling simultaneous achievement of reliable temporary adhesion and high etching rate.

Inventive Principle:
Principle #40Composite materials

2Strength

If strong adhesion is used to resist polishing stress, then the semiconductor wafer remains stable during polishing, but the detachment becomes difficult and may cause wafer breakage or deformation

Engineering Contradiction:
Improveadhesion forceVSAvoiddetachment ease
Core Design Contradiction:
StrengthVSEase of operation

Solution Approach 1:

The patent creates a dynamic adhesion system where the adhesive's bonding strength can be modulated. During polishing, the siloxane-containing adhesive provides strong adhesion to resist stress. During detachment, the adhesive's bond can be easily broken through chemical treatment or mechanical means, allowing the wafer to be released without damage. This dynamic behavior enables both strong holding and easy release.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The patent utilizes the unique property of siloxane compounds that can change their bonding characteristics under different conditions. The adhesive maintains strong adhesion during the polishing process but allows for easy detachment afterward, achieving both high adhesion force and ease of operation through controlled chemical composition and structure.

Inventive Principle:
Principle #35Parameter changes

3Ease of manufacture

If external loads such as heating and pressure are applied during processing, then the semiconductor substrate can be processed, but the bump balls may be damaged or deformed

Engineering Contradiction:
Improveprocessing capabilityVSAvoidbump deformation
Core Design Contradiction:
Ease of manufactureVSManufacturing precision

Solution Approach 1:

The patent applies beforehand cushioning by using the siloxane-containing adhesive as a protective layer between the semiconductor substrate and the support. This adhesive layer absorbs and distributes external loads such as heating and pressure before they reach the bump balls, preventing damage or deformation while still allowing necessary processing to occur.

Inventive Principle:
Principle #11Beforehand cushioning (Prior cushioning)

Solution Approach 2:

The siloxane-containing adhesive acts as an intermediary material between the semiconductor substrate and the support structure. It mediates the transmission of external loads, reducing the direct impact on bump balls during processing operations involving heating and pressure, thereby protecting the precision components while enabling manufacturing processes.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The adhesive composition ensures reliable temporary adhesion with stress resistance during polishing, prevents bump deformation under external loads, and enables efficient removal of the adhesive layer with high etching rates, enhancing semiconductor substrate processing.

Implementation Method 1

a polyorganosiloxane component (A) that is cured by hydrosilylation reaction

Methodology Applied
Scientific EffectHydrosilylation reaction: Chemical Bonding

Implementation Method 2

the adhesive layer left on the semiconductor wafer is dissolved and removed by, for example, wet etching using a detergent composition

Methodology Applied
Scientific EffectWet etching: Solvation

Data Source

PatentUS20240182766A1Adhesive composition, laminate, method for producing laminate, and method for producing semiconductor substrate
Publication Date: 2024.06.06 NISSAN CHEM CORP
  • US20240182766A1 patent drawing
  • US20240182766A1 patent drawing
  • US20240182766A1 patent drawing

AI summary

An adhesive composition containing an adhesive component, in which the adhesive component contains a polyorganosiloxane component that is cured by hydrosilylation reaction, and the polyorganosiloxane component contains a polymer represented by formula (V) below, wherein n represents the number of repeating units, and is a positive integer, and the polyorganosiloxane component has a weight average molecular weight of 60,000 or more.