Siloxane Conversion Layer for Micro-Pixel Optoelectronic Components
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Solution Overview
Problem
Current optoelectronic components, such as LED and laser diode lighting applications, face challenges in achieving precise light control and color uniformity due to limitations in conversion elements, including fragility, crosstalk, and thermal stability, especially at micro-pixel sizes below 300 μm, where traditional materials like ceramic, single crystal, and phosphor-in-glass options are inadequate.
Innovation Solution
An optoelectronic component with a crosslinked siloxane-based matrix and embedded phosphors applied directly to the radiation exit surface of semiconductor pixels, allowing for thin, thermally stable, and color-uniform conversion layers with reduced organic content, enabling efficient down-conversion of primary radiation to secondary radiation without the need for high-temperature processing or solvents.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If traditional conversion elements (ceramic, single crystal, thin-film) are used, then they can provide conversion functionality, but they require glue layers which increase crosstalk and worsen thermal management
Solution Approach 1:
The patent merges the conversion layer directly with the semiconductor chip by applying the phosphor-containing matrix material directly onto the chip surface, eliminating the need for separate glue layers and carrier substrates. This direct integration reduces crosstalk between pixels and simplifies the overall structure while maintaining conversion functionality.
Solution Approach 2:
The invention extracts and removes the harmful glue layer and carrier substrate components from the traditional conversion element structure. By eliminating these intermediate layers, the patent directly addresses crosstalk issues and thermal management problems while reducing device complexity.
2Object-affected harmful factors
If conversion elements are made very thin (≤20 μm) for micro-pixel applications, then crosstalk is reduced, but the elements become very fragile and handling becomes difficult
Solution Approach 1:
The patent uses a composite material system consisting of a crosslinked matrix (such as silicone or polymer-based) embedded with phosphor particles. This composite structure provides the necessary mechanical strength and flexibility to maintain thin conversion layers (≤20 μm) while preventing fragility and handling difficulties. The matrix material acts as a binding medium that reinforces the thin phosphor layer.
Solution Approach 2:
The invention changes the physical and chemical parameters of the conversion layer by using crosslinked matrix materials with specific mechanical properties. The crosslinking process enhances the mechanical strength and durability of the thin conversion layer, enabling it to withstand handling and operation without breaking, while maintaining the required thinness for low crosstalk.
3Stability of the object's composition
If nitride phosphors are used for red emission, then color uniformity is achieved, but they are easily damaged at elevated temperatures in air
Solution Approach 1:
The patent employs an inert or controlled atmosphere environment during the processing and operation of nitride phosphors. By creating a protective environment that limits oxygen exposure at elevated temperatures, the invention prevents oxidation and degradation of the nitride phosphor materials, thereby maintaining both color uniformity and thermal reliability.
Solution Approach 2:
The invention uses composite material structures where nitride phosphors are embedded in a protective matrix material that provides thermal stability. This composite approach allows the nitride phosphor to maintain its color uniformity properties while the matrix material protects it from thermal damage and oxidation during high-temperature processing and operation.
4Adaptability or versatility
If multiple phosphors are needed to produce required spectrum, then spectral capabilities are improved, but traditional conversion elements cannot accommodate phosphor blends
Solution Approach 1:
The patent creates a universal conversion layer structure using a crosslinked matrix material that can accommodate any type and combination of phosphor particles. This multi-functional platform enables the integration of multiple phosphors with different emission characteristics (including red, green, blue, and white phosphors) within a single conversion layer, providing broad spectral capabilities without requiring separate conversion elements for each phosphor type.
Solution Approach 2:
The invention merges multiple phosphor materials into a single integrated conversion layer by embedding different phosphor particles within the same crosslinked matrix. This combining approach allows multiple phosphors to work together in one layer, achieving broad spectral output and eliminating the need for multiple separate conversion elements or complex multi-layer structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution minimizes crosstalk, enhances thermal stability, and achieves color uniformity across pixels, enabling the production of micro-pixelated lighting with broad spectral capabilities, including cool and warm-white blends, while maintaining mechanical integrity and stability under high light flux conditions.
Implementation Method 1
The conversion layers comprise a crosslinked matrix having a three-dimensional siloxane-based network and at least one phosphor embedded in said matrix, wherein the conversion layers have a thickness of ≤30 μm
Implementation Method 2
enhances thermal stability, and achieves color uniformity across pixels, enabling the production of micro-pixelated lighting with broad spectral capabilities, including cool and warm-white blends, while maintaining mechanical integrity and stability under high light flux conditions
Data Source
AI summary
An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment an optoelectronic component includes a semiconductor chip including a plurality of pixels, each pixel configured to emit electromagnetic primary radiation from a radiation exit surface and conversion layers located on at least a part of the radiation exit surfaces, wherein the conversion layers comprise a crosslinked matrix having a three-dimensional siloxane-based network and at least one phosphor embedded in the matrix, and wherein the conversion layers have a thickness of ≤30 μm.