Patterned Film Preparation Using Siloxane Developing Solvent
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Solution Overview
Problem
Conventional methods for preparing patterned films leave residual silicone on the film-free region, which requires excessive plasma etching and can degrade sensitive structures like PECVD silicon nitride, necessitating a solution to minimize residual silicone presence.
Innovation Solution
A method involving a silicone composition with an organopolysiloxane and a hydrosilylation catalyst, applied to a substrate, exposed to radiation, and developed using a solvent with a siloxane component to create a patterned film with minimal residual silicone, reducing the need for plasma etching.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional developing solvents are used to remove the non-exposed region, then the patterned film is formed, but residual silicone remains on the film-free region
Solution Approach 1:
The patent changes the chemical composition parameter of the developing solvent by incorporating siloxane components (such as hexamethyldisiloxane, octamethyltrisiloxane, or decamethyltetrasiloxane) into the solvent system. This parameter change enables the solvent to effectively dissolve and remove residual silicone from the film-free region while maintaining the integrity of the patterned film, thereby resolving the contradiction between pattern quality and residual silicone presence.
2Reliability
If fluorine-based plasma is used to remove residual silicone, then residual silicone is removed, but PECVD silicon nitride and other etch-sensitive structures are degraded
Solution Approach 1:
The patent introduces siloxane-based developing solvent as an intermediary substance that performs the function of removing residual silicone during the development process itself. This intermediary approach eliminates the need for subsequent aggressive fluorine-based plasma treatment, thereby protecting PECVD silicon nitride and other etch-sensitive substrate structures from degradation while still achieving reliable residual silicone removal.
3Reliability
If excessive fluorine plasma is used to remove residual silicone, then residual silicone is completely removed, but production time increases and substrate structures are damaged
Solution Approach 1:
The patent performs the residual silicone removal action preliminarily during the development step by using siloxane-based developing solvents. By incorporating the residual silicone removal function into the development process itself, the need for time-consuming subsequent plasma etching steps is eliminated, thereby significantly reducing production time while maintaining reliable residual silicone removal.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method results in a patterned film with significantly reduced residual silicone on the film-free region, decreasing plasma etching requirements and production time while maintaining the integrity of sensitive substrate structures.
Implementation Method 1
The non-exposed region of the partially exposed film is removed with the developing solvent to reveal a film-free region and to form the patterned film. The film-free region of the substrate is substantially free of residual silicone due to the presence of the siloxane component in the developing solvent.
Implementation Method 2
A portion of the film is exposed to radiation, typically by placing a photomask having a desired pattern over the film, to produce a partially exposed film that has an exposed region and a non-exposed region.
Implementation Method 3
The partially exposed film is then heated for a sufficient amount of time and at a sufficient temperature to substantially insolubilize the exposed region in a developing solvent, with the non-exposed region remaining soluble in the developing solvent.
Data Source
Figure 1
AI summary
A method of preparing a patterned film on a substrate includes applying a silicone composition onto a substrate to form a film of the silicone composition. A portion of the film is exposed to radiation to produce a partially exposed film having an exposed region and a non-exposed region. The partially exposed film is heated for a sufficient amount of time and at a sufficient temperature to substantially insolubilize the exposed region in a developing solvent that includes a siloxane component. The non-exposed region of the partially exposed film is removed with the developing solvent to reveal a film-free region on the substrate and to form the patterned film including the exposed region that remains on the substrate. The film-free regions is substantially free of residual silicone due to the presence of the siloxane component in the developing solvent.