Siloxane Dielectric Materials for Flexible Microelectronics
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Solution Overview
Problem
Current dielectric materials used in the electronics industry are too rigid and brittle for back-end of line applications, such as redistribution and passivation layers, where flexibility and thermal expansion management are crucial, and they often require complex blending of multiple compounds to achieve desired mechanical and thermal properties.
Innovation Solution
Development of siloxane oligomers and polymers with a monomer composition comprising a first and second siloxane monomer, where the first monomer includes a substituted or unsubstituted maleimide group, allowing for the creation of crosslinkable dielectric materials with excellent film forming, thermal, and mechanical properties, including low coefficient of thermal expansion and flexibility.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If conventional dielectric materials are used, then good barrier and passivation properties are achieved, but the materials are too rigid and brittle causing mechanical deformation and thermal stress
Solution Approach 1:
The patent modifies the chemical composition parameters of dielectric materials by incorporating siloxane oligomers and polymers with specific structures (Formula I and II) containing adjustable R groups and x values, enabling tuning of flexibility and thermal expansion properties while maintaining barrier performance
Solution Approach 2:
The invention creates composite dielectric materials by combining siloxane oligomers/polymers with other compounds in crosslinkable compositions, achieving a balance between rigidity for barrier properties and flexibility for thermal management, resolving the contradiction between mechanical strength and adaptability
2Reliability
If complex blending of multiple compounds is used to achieve desired mechanical and thermal properties, then property requirements are met, but manufacturing complexity and cost increase
Solution Approach 1:
The siloxane oligomers and polymers serve multiple functions simultaneously: providing barrier properties, passivation, planarization, flexibility, and thermal expansion management in a single material system, eliminating the need for complex multi-component blends and simplifying manufacturing processes
Solution Approach 2:
By adjusting parameters within the siloxane structure (R groups and x values) and composition ratios, a wide range of mechanical and thermal properties can be achieved with a single material family, reducing the need for complex blending of multiple different compounds
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The new dielectric materials provide improved flexibility and thermal management, reducing mechanical deformation and thermal stress in microelectronic devices, enabling cost-effective and sustainable production with reduced defective products.
Implementation Method 1
The siloxane oligomers or polymers of the present invention are photostructurable and may be used for the preparation of passivation layers or barrier coatings
Implementation Method 2
the material is characterized by a low dielectric constant and a low coefficient of thermal expansion (CTE). Due to a favorable and well-balanced relationship between stiffness and elasticity of the material, thermal stress which may occur during device operation can be easily compensated
Data Source
AI summary
The present invention relates to novel siloxane oligomer and polymers and crosslinkable compositions, which may be used for the preparation of dielectric materials having excellent barrier, passivation and/or planarization properties. There is also provided a monomer composition from which the siloxane oligomers or polymers may be obtained and a method for preparing said siloxane oligomers or polymers. Beyond that, the present invention relates to a manufacturing method for preparing a microelectronic structure, wherein a crosslinkable composition is applied to a surface of a substrate and then cured, and to an electronic device comprising a microelectronic structure which is obtained by said manufacturing method.