Organic Siloxane Resin Passivation for Copper Wiring Oxidation
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Solution Overview
Problem
Conventional passivation layers made of silicon oxide or silicon nitride fail to achieve desirable thin film transistor characteristics when using oxide semiconductors and copper wiring, leading to oxidation issues and the need for additional capping layers.
Innovation Solution
A passivation layer solution composition incorporating an organic siloxane resin, which includes specific R groups and a solvent like propylene glycol monomethylether, is used to form a thin film transistor array panel, eliminating the need for additional capping layers and enhancing transistor characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional silicon oxide or silicon nitride passivation layers are used with copper wiring and oxide semiconductor, then the passivation layer provides basic protection, but the wiring surface oxidizes and desirable thin film transistor characteristics are not realized
Solution Approach 1:
The patent changes the chemical composition parameters of the passivation layer by using organic siloxane resin instead of conventional inorganic materials like silicon oxide or silicon nitride. This material substitution fundamentally alters the chemical properties of the passivation layer to provide both oxidation resistance and improved transistor characteristics simultaneously
Solution Approach 2:
The patent employs composite material structure by combining organic siloxane resin with specific functional groups and solvents to create a passivation layer that integrates multiple functions: oxidation barrier, transistor performance enhancement, and processability. The composite nature allows simultaneous achievement of protective and functional properties
2Object-affected harmful factors
If conventional passivation layers are used to protect copper wiring, then oxidation protection is needed, but additional capping layers are required increasing device complexity
Solution Approach 1:
The patent merges the oxidation protection function and the transistor performance enhancement function into a single passivation layer made of organic siloxane resin. This consolidation eliminates the need for separate capping layers while maintaining comprehensive protection and optimal device characteristics
Solution Approach 2:
The organic siloxane resin passivation layer performs multiple functions simultaneously: it acts as an oxidation barrier for copper wiring, provides desirable thin film transistor characteristics, and serves as the primary passivation layer. This multi-functionality reduces the overall device structure complexity while achieving comprehensive protection and performance
Data Source
AI summary
A passivation layer solution composition is provided. A passivation layer solution composition according to an exemplary embodiment of the present invention includes an organic siloxane resin represented by Chemical Formula 1 below.In Chemical Formula 1, R is at least one substituent selected from a saturated hydrocarbon or an unsaturated hydrocarbon having from 1 to about 25 carbon atoms, and x and y may each independently be from 1 to about 200, and wherein each wavy line indicates a bond to an H atom or to an x siloxane unit or a y siloxane unit, or a bond to an x siloxane unit or a y siloxane unit of another siloxane chain comprising x siloxane units or y siloxane units or a combination thereof.