Siloxane Polymer Patterning Process for Semiconductor Finer Patterns
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Solution Overview
Problem
Current patterning processes face challenges in achieving finer patterns with high efficiency and accuracy, particularly in semiconductor manufacturing, due to limitations in wavelength resolution, overlay accuracy, and complexity in double patterning methods, which hinder further miniaturization and increase costs.
Innovation Solution
A patterning process involving the formation of a photoresist pattern, followed by application of an alkaline solution and a siloxane polymer crosslinkable by the alkaline substance to create a crosslinked structure, allowing for precise control of the siloxane pattern dimensions and simplification of the process, enabling efficient formation of finer patterns.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional lithography methods are used, then existing manufacturing capabilities are maintained, but further miniaturization of pattern rules cannot be achieved due to wavelength resolution limits
Solution Approach 1:
The patent applies segmentation by dividing the patterning process into multiple stages: first forming a mandrel pattern, then using it as a template to create spacer patterns. This multi-step approach enables achieving finer pattern rules (below conventional wavelength limits) by breaking down the single-exposure limitation into sequential processing steps, thereby resolving the contradiction between manufacturing precision and measurement precision.
2Manufacturing precision
If double patterning methods are used to achieve finer patterns, then pattern miniaturization is enabled, but process complexity increases
Solution Approach 1:
The patent employs preliminary action by pre-forming a mandrel pattern that serves as a template for subsequent spacer deposition. This pre-prepared structure guides the self-aligned formation of final patterns, reducing alignment complexity and process variability. The mandrel acts as a preliminary guide that simplifies the overall double patterning process while enabling finer pattern resolution.
3Productivity
If higher curing temperatures are used for siloxane crosslinking, then crosslinking efficiency is improved, but pattern dimension control deteriorates
Solution Approach 1:
The patent applies parameter changes by utilizing alkaline substances to catalyze siloxane crosslinking at lower temperatures. This chemical catalysis approach changes the reaction parameters (temperature, pH) to achieve efficient crosslinking without the high temperatures that would cause pattern distortion. The alkaline-catalyzed mechanism enables both high productivity and precise dimension control simultaneously.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This process allows for the formation of fine patterns with improved precision and efficiency, reducing curing temperature and complexity, and enabling the use of conventional etching methods, thus enhancing semiconductor manufacturing capabilities.
Implementation Method 1
applying a solution of a siloxane polymer crosslinkable by action of the alkaline substance onto the photoresist pattern attached with the alkaline solution to fill a space between the neighboring photoresist patterns with the siloxane polymer thereby forming a crosslinked part by crosslinking the siloxane polymer near the photoresist patterns
Data Source
AI summary
There is disclosed a patterning process comprises at least (1) a step of forming an organic underlayer film on a substrate and then forming a photoresist pattern on the organic underlayer film, (2) a step of attaching an alkaline solution containing an alkaline substance onto the photoresist pattern and then removing the excess alkaline solution, (3) a step of applying a solution of a siloxane polymer crosslinkable by action of the alkaline substance onto the photoresist pattern to form a crosslinked part by crosslinking the siloxane polymer near the photoresist patterns, and (4) a step of removing the uncrosslinked siloxane polymer and the photoresist pattern. There can be provided a patterning process capable of forming a further finer pattern simply and efficiently and with a high practicability applicable to semiconductor manufacturing.