Siloxane Ionic Resist Composition for Fine Pattern Resolution
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Solution Overview
Problem
Current resist compositions struggle to achieve both high etching resistance and fine pattern resolution, particularly as pattern sizes approach the range of ten nanometers, with existing silicon-containing resins exhibiting high dry etching resistance but requiring improvement in reducing pattern roughness.
Innovation Solution
A resist composition containing a silicon-containing resin with a polymer that includes a siloxane bond and an ionic group, represented by General Formula (I0), which generates acid upon exposure, enhancing solubility changes in developing solutions to reduce pattern roughness and improve lithography characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If a silicon-containing resin is used as a base material component, then dry etching resistance is improved, but pattern roughness increases
Solution Approach 1:
The patent uses a composite polymer structure containing both siloxane bonds (for etching resistance) and ionic groups (for smooth patterning). This composite approach combines the advantages of silicon-containing resins with the benefits of ionic polymers, achieving both high etching resistance and low pattern roughness
Solution Approach 2:
The patent introduces ionic groups at specific locations within the polymer structure to locally modify the resin's properties. These ionic groups are strategically placed to control acid diffusion and improve patterning characteristics without compromising the overall etching resistance provided by the siloxane backbone
2Manufacturing precision
If pattern size is reduced to achieve fine patterning, then resolution is improved, but etching resistance deteriorates
Solution Approach 1:
The patent changes the chemical parameters of the resist material by incorporating polymers with specific siloxane bond structures and ionic group configurations. This allows the material to maintain appropriate etching resistance even when pattern dimensions are reduced to the fine-patterning range
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed resist composition effectively reduces pattern roughness and enhances lithography performance, enabling the formation of fine patterns with improved etching resistance and resolution in semiconductor and liquid crystal display element manufacturing.
Implementation Method 1
a polymer (A1) containing a siloxane bond and an ionic group represented by General Formula (I0), which is decomposed upon exposure to generate acid
Data Source
AI summary
A resist composition that generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid. The resist composition contains a polymer containing a siloxane bond and an ionic group represented by General Formula (I0), which is decomposed upon exposure to generate an acid. In General Formula (I0), Mm+ represents a sulfonium cation or an iodonium cation, m represents an integer of 1 or more, and * represents a bonding site