Silsesquioxane Resin Double Patterning Spacer
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Solution Overview
Problem
In the microelectronics industry, achieving smaller half-pitch nodes for increased circuitry within a given chip size requires advanced microlithography techniques, with double patterning being a critical method, but existing silicon materials do not meet the necessary criteria for effective use in these processes, particularly in terms of solubility and etchability.
Innovation Solution
The use of silsesquioxane resin-based coating compositions that can be cured and etched, applied over a patterned photo-resist layer, allowing for the formation of patterns on substrates through specific chemical and radiation curing mechanisms, followed by selective removal to create desired patterns on sidewalls.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional silicon materials are used in double patterning, then the process can be simplified, but the materials fail to meet the necessary criteria for solubility and etchability
Solution Approach 1:
The patent uses silsesquoxane resin as a composite material that combines the desired solubility properties (in organic solvents like PGMEA) with etchability (via oxygen plasma). This composite material approach resolves the contradiction by providing a single material that satisfies multiple conflicting requirements: it can be dissolved for patterning and selectively etched, whereas conventional silicon materials failed to meet these criteria.
2Productivity
If self-aligned spacer mask method is used, then line density is doubled, but the process becomes very sophisticated with many complex steps
Solution Approach 1:
The patent extracts and removes the uncured silsesquoxane resin from horizontal surfaces using a solvent (PGMEA), leaving only the cured spacer material on sidewalls. This extraction approach simplifies the process by selectively removing material based on its cured vs. uncured state, reducing the number of complex steps compared to conventional self-aligned spacer methods while maintaining the line density doubling benefit.
Solution Approach 2:
The patent utilizes parameter changes in the silsesquoxane resin material - specifically its solubility parameters - to enable selective removal. The uncured resin remains soluble in PGMEA and can be washed away, while the cured resin becomes insoluble and remains on the sidewalls. This parameter-based differentiation simplifies the patterning process while achieving high line density.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the creation of precise patterns on substrates, enhancing feature density and process efficiency by using silsesquioxane resins that meet the necessary criteria for double patterning, such as solubility and etchability, thereby supporting the development of smaller chip nodes.
Implementation Method 1
The coating composition is applied over the patterned photo-resist and cured at the pattern surface to produce a cured silsesquioxane resin on the pattern surface
Implementation Method 2
it must be in a solvent that the photo-resist is not soluble in such as an organic alcohol or ether
Data Source
AI summary
A silsesquioxane resin is applied over the patterned photo-resist and cured at the pattern surface to produce a cured silsesquioxane resin on the pattern surface. The uncured silsesquioxane resin layer is then removed leaving the cured silsesquioxane resin on the pattern surface. The cured silsesquioxane resin on horizontal surfaces is removed to expose the underlying photo-resist. This photo-resist is removed leaving a pattern of cured silsesquioxane. Optionally, the new pattern can be transferred into the underlying layer(s).