Silver Current Spreading Structure With Dielectric Mirror Barrier

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Solution Overview

Problem

Current optoelectronic semiconductor components face challenges in achieving improved electrical contacting and output efficiency as semiconductor miniaturization progresses, particularly in reflecting and emitting electromagnetic radiation effectively while preventing silver migration issues.

Innovation Solution

The optoelectronic semiconductor component incorporates a dielectric mirror layer and current spreading structures with silver, where the dielectric mirror layer encases the current spreading structures to enhance reflectivity and prevent silver migration, and includes a transparent conductive layer for improved contact resistance and homogeneous current injection.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If silver is used in current spreading structures to improve electrical contacting and current distribution, then electrical conductivity and current spreading performance are improved, but silver migration occurs causing reliability degradation

Engineering Contradiction:

Improveelectrical contacting reliabilityVSAvoidsilver migration

Core Design Contradiction:

ReliabilityVSObject-generated harmful factors

Solution Approach 1:

A dielectric mirror layer is introduced as an intermediary between the silver-containing current spreading structure and the surrounding environment. This dielectric layer acts as a barrier that prevents silver migration while maintaining the electrical functionality of the silver layer, thus resolving the contradiction between improving electrical contacting and preventing silver migration.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The current spreading structure is designed as a composite system combining silver (for electrical conductivity) with dielectric materials (for migration prevention). This composite approach allows the structure to simultaneously achieve high electrical conductivity and reliability by preventing silver migration through the dielectric barrier.

Inventive Principle:

Principle #40Composite materials

2Reliability

If conventional contact structures are used to achieve electrical connection, then device structure is simple, but electrical contact resistance is high and current distribution is non-uniform

Engineering Contradiction:

Improveelectrical contact performanceVSAvoidcurrent spreading structure complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The dielectric mirror layer serves multiple functions simultaneously: it acts as an electrical insulator, a reflective optical element, and a barrier against silver migration. This multi-functionality improves electrical contact performance and prevents silver migration without proportionally increasing device complexity, as the same structural element performs multiple roles.

Inventive Principle:

Principle #6Universality (Multi-functionality)

3Productivity

If miniaturization of optoelectronic semiconductors is pursued to improve integration density, then device size is reduced, but electrical contacting and output efficiency become more difficult to achieve

Engineering Contradiction:

Improveintegration densityVSAvoidelectrical contacting quality

Core Design Contradiction:

ProductivityVSReliability

Solution Approach 1:

The current spreading structure with silver and dielectric mirror layer provides locally optimized electrical contacting at the contact regions, ensuring high current spreading performance and low contact resistance even in miniaturized devices. This local quality enhancement allows miniaturization to proceed while maintaining electrical contacting quality through specialized contact region design.

Inventive Principle:

Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration increases the reflectivity of emitted electromagnetic radiation, improves electrical contacting, and prevents silver migration issues, thereby enhancing the output efficiency and reliability of the optoelectronic semiconductor component.

Implementation Method 1

a dielectric mirror layer which is arranged on the side of the first main surface of the first semiconductor layer and on a side of the first or second current spreading structure facing away from the first semiconductor layer

Methodology Applied

Scientific EffectReflection: Reflection

Implementation Method 2

at least one of the first and second current spreading structures contains silver

Methodology Applied

Scientific EffectElectrical conduction: Conduction (electrical)

Data Source

PatentUS12051768B2Optoelectronic semiconductor component with a current spreading structure containing silver, and optoelectronic device

Publication Date: 2024.07.30 AMS OSRAM INT GMBH

AI summary

An optoelectronic semiconductor component comprises a first semiconductor layer of a first conductivity type having a first main surface and a second semiconductor layer of a second conductivity type arranged on a side facing away from the first main surface of the first semiconductor layer. The optoelectronic semiconductor component further comprises, on the side of the first main surface, a first current spreading structure electrically connected to the first semiconductor layer and a second current spreading structure electrically connected to the second semiconductor layer. The optoelectronic semiconductor component furthermore includes a dielectric mirror layer arranged on the side of the first main surface of the first semiconductor layer and on a side of the first or second current spreading structure facing away from the first semiconductor layer. At least one of the first and second current spreading structures contains silver.