Silver Deposition Method for Non-Volatile Memory Devices
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Solution Overview
Problem
As semiconductor devices approach sizes less than 100 nm, physical issues such as the short channel effect hinder proper operation, and non-volatile memory devices like Flash memories face challenges with high programming voltage leading to dielectric breakdown, while alternative memory technologies like Fe-RAM, MRAM, and ORAM struggle with material compatibility and scalability, reliability, and high power consumption.
Innovation Solution
A method for forming a silver structure in resistive switching devices involves a cleaning process using chlorine bearing species followed by a reaction with an ammonia solution to remove chloride contaminants, maintaining the silver material intact and free from defects, compatible with conventional semiconductor equipment and techniques.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional etching processes using chlorine bearing species are used to pattern diffusion barrier material, then patterning precision is improved, but chloride contaminant species are formed on the silver layer material surface
Solution Approach 1:
A cleaning process is performed after the etching process to remove chloride contaminant species from the silver layer material surface. This preliminary cleaning action prevents contaminants from affecting subsequent processing steps and ensures device reliability.
Solution Approach 2:
The patent introduces a cleaning solution as an intermediary substance that selectively removes chloride contaminant species from the silver surface without damaging the silver material itself. This intermediary cleaning step mediates between the etching process and subsequent device fabrication steps.
2Speed
If high voltage is applied for programming Flash memories, then programming speed is improved, but dielectric breakdown occurs
Solution Approach 1:
The patent transitions from high-voltage programming in Flash memories to low-voltage operation in resistive switching devices. By changing the operating voltage parameter and using a different memory mechanism (resistive switching vs. charge trapping), the device achieves fast programming speeds without dielectric breakdown.
3Speed
If new materials are used for alternative memory devices like Fe-RAM and MRAM, then switching speed is improved, but compatibility with CMOS manufacturing is lost
Solution Approach 1:
The patent uses silver layer material that is compatible with conventional CMOS manufacturing processes. By using materials and processes that are homogeneous with existing semiconductor fabrication techniques, the device achieves both fast switching performance and ease of manufacture in standard CMOS foundries.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively removes contaminant species from silver surfaces, maintaining the material's integrity and preventing defects, while allowing for the use of conventional semiconductor processes, enhancing the scalability and reliability of non-volatile memory devices.
Implementation Method 1
reacting the one or more chloride contaminant species with a solution comprising an ammonia species to form a water soluble species
Data Source
AI summary
A method for forming a silver structure for a non-volatile memory device includes providing a silver layer material upon a underlying substrate, forming a diffusion barrier material overlying the silver layer material, forming a dielectric hard mask material overlying the diffusion barrier material, subjecting the dielectric hard mask material to a patterning and etching process to form a hard mask and to expose a portion of the diffusion barrier material, subjecting the portion of the diffusion barrier material to an etching process using one or more chlorine bearing species as an etchant material, wherein one or more chloride contaminant species is formed overlying at least a portion of the silver layer material, and reacting the one or more chloride contaminant species with a solution comprising an ammonia species to form a water soluble species, wherein the ammonia species is free from an oxidizing species.