Silver Nanoparticle Electrodes for Avalanche Photodiode Sensitivity

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Solution Overview

Problem

Current image sensors, particularly those using semiconductor devices, face challenges in efficiently detecting and amplifying charge carriers from radiation, such as X-rays, due to limitations in avalanche photodiode design and electrode materials, which affect the accuracy and sensitivity of radiation detection.

Innovation Solution

The use of an array of avalanche photodiodes with silver nanoparticle electrodes, where the silver nanoparticles form a conductive network above the electrical percolation threshold, are electrically connected to absorption regions, and the amplification regions have a controlled electric field to induce an avalanche effect without self-sustaining, enhancing charge carrier generation and collection.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If conventional electrode materials are used in avalanche photodiodes, then the device structure is simple, but the detection sensitivity and charge carrier amplification are insufficient

Engineering Contradiction:
Improvedetection sensitivityVSAvoidelectrode structure complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The electrode is constructed as a composite material system combining silver nanoparticles with a polymer matrix (such as polyacrylonitrile or polyvinylidene fluoride). This composite structure provides both the electrical conductivity needed for charge carrier collection and the structural framework that enables enhanced detection sensitivity, resolving the contradiction between simple structure and high performance

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The electrode properties are optimized by controlling the concentration of silver nanoparticles within the polymer matrix, ensuring the nanoparticle density exceeds the electrical percolation threshold. This parameter adjustment transforms the electrode from an insulating to a conductive state, enabling effective charge carrier amplification while maintaining a relatively simple fabrication process

Inventive Principle:
Principle #35Parameter changes

2Productivity

If the electric field is increased to enhance avalanche effect, then charge carrier amplification improves, but the avalanche becomes self-sustaining causing device instability

Engineering Contradiction:
Improvecharge carrier amplificationVSAvoidavalanche stability
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The electric field strength in the amplification region is precisely controlled to fall within an optimal range that enables avalanche multiplication of charge carriers while remaining below the threshold for self-sustaining breakdown. This parameter optimization allows the device to achieve high charge carrier amplification (internal gain) while maintaining stable operation and preventing runaway avalanche effects

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The device operation benefits from the feedback mechanism inherent in avalanche photodiodes, where the amplified charge carriers generate a current that can be measured and used to infer the presence and intensity of incident radiation. The controlled avalanche process provides positive feedback that enhances sensitivity without leading to instability, as the system operates in a regime where the avalanche is triggered by external radiation rather than self-sustaining

Inventive Principle:
Principle #23Feedback

3Reliability

If silver nanoparticle concentration is increased to improve conductivity, then electrical percolation threshold is exceeded, but manufacturing precision becomes more difficult

Engineering Contradiction:
Improveelectrical conductivityVSAvoidnanoparticle distribution control
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The polymer matrix serves as an intermediary medium that facilitates the uniform distribution of silver nanoparticles throughout the electrode structure. By dispersing nanoparticles within the polymer matrix before curing or solidification, the system achieves homogeneous nanoparticle distribution that reliably exceeds the electrical percolation threshold while avoiding aggregation and simplifying the manufacturing process

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The manufacturing process is optimized by controlling parameters such as nanoparticle concentration, polymer matrix composition, and curing conditions to achieve the desired electrical conductivity. By adjusting these parameters, the system ensures that the silver nanoparticle density consistently exceeds the percolation threshold across different fabrication batches, maintaining reliable conductivity without requiring extremely precise nanoparticle placement

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration significantly improves the detection sensitivity and accuracy of radiation, allowing for precise imaging by amplifying charge carriers effectively and enabling the formation of detailed images using X-ray sources.

Implementation Method 1

the absorption region is configured to generate charge carriers from a photon absorbed by the absorption region

Methodology Applied
Scientific EffectPhotoelectric effect: Photoelectric Effect

Implementation Method 2

the electric field is at a value sufficient to cause an avalanche of charge carriers entering the first amplification region

Methodology Applied
Scientific EffectAvalanche effect: Avalanche Breakdown

Data Source

PatentEP3821473B1Image sensors with silver-nanoparticle electrodes
Publication Date: 2023.07.05 SHENZHEN XPECTVISION TECH CO LTD
  • EP3821473B1 patent drawingFigure 1
  • EP3821473B1 patent drawingFigure 2A~2C
  • EP3821473B1 patent drawingFigure 3A

AI summary

An apparatus comprising: an array of avalanche photodiodes (APDs) (350) or an absorption region (210, 310) comprising a semiconductor single crystal (406) such as a CdZnTe single crystal or a CdTe single crystal. The apparatus may be configured to absorb radiation particles incident on an absorption region (210, 310) of the APDs (350) or the semiconductor single crystal (406) and to generate charge carriers. The apparatus may comprise an electrode (301, 304, 419A, 419B, 501) comprising silver nanoparticles (322, 422, 522) and being electrically connected to the absorption region (210, 310) of the APDs (350) or the semiconductor single crystal (406). For the APDs (350), each of the APDs (350) may comprise an amplification region (220,320), which may comprise a junction (315) with an electric field in the junction (315). The electric field may be at a value sufficient to cause an avalanche of charge carriers entering the amplification region (220,320), but not sufficient to make the avalanche self-sustaining. The junctions (315) of the APDs (350) may be discrete.