Silver Sintered Bonding Member with Additive Particles
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Solution Overview
Problem
Conventional semiconductor devices with silver sintered body bonding members experience significant void formation and reduced bonding strength when exposed to high temperatures for extended periods, leading to potential deterioration.
Innovation Solution
Incorporating additive particles with metal atoms having higher aggregation energy than silver atoms into the silver sintered body bonding members, such as tungsten oxide or tungsten carbide, to suppress silver atom diffusion and maintain bonding strength.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a bonding member is made of an Ag sintered body with only silver particles, then the manufacturing process is simple and cost-effective, but large voids form after prolonged high-temperature exposure leading to reduced bonding strength
Solution Approach 1:
The bonding member is constructed as a composite material consisting of silver particles combined with particles having higher aggregation energy than silver atoms (such as tungsten, molybdenum, or nickel particles). This composite structure prevents the formation of large voids during high-temperature storage while maintaining manufacturing feasibility, thereby resolving the contradiction between reliability and device complexity.
2Strength
If silver atoms are allowed to diffuse freely in the bonding member, then the material maintains good electrical conductivity, but large voids form reducing the mechanical bonding strength
Solution Approach 1:
Particles with higher aggregation energy than silver atoms serve as intermediary elements that restrict silver atom diffusion. These particles act as anchors that prevent excessive silver atom movement during high-temperature storage, thereby preventing void formation while maintaining the electrical conductivity provided by the silver matrix.
3Duration of action of moving object
If the bonding member is exposed to high temperatures for extended periods, then the semiconductor device can be processed and operated, but silver atom diffusion causes void formation and bonding strength degradation
Solution Approach 1:
Particles with higher aggregation energy are incorporated into the bonding member before high-temperature exposure to preemptively counteract silver atom diffusion. This preliminary anti-action prevents void formation from occurring in the first place during subsequent high-temperature storage or operation, thereby maintaining bonding strength throughout the service life.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Prevents the formation of large voids and maintains bonding strength even after prolonged high-temperature exposure, enhancing the durability of the bonding members.
Implementation Method 1
suppress silver atom diffusion
Implementation Method 2
metal atom having aggregation energy higher than a silver atom
Data Source
AI summary
A semiconductor device includes: a mounting member having an electrode; a conductive member facing the electrode; and a bonding member electrically and mechanically connecting the electrode and the conductive member. The bonding member is made of a sintered body in which an additive particle including a metal atom having aggregation energy higher than a silver atom is added to an silver particle.