Silver Sintered Semiconductor Chip Bonding Pressure Control
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Solution Overview
Problem
Semiconductor devices with different thickness semiconductor chips face breakage due to uneven pressure distribution during the sintering process, and the use of cobalt tungsten plating films results in oxidation and degradation of bonding properties with silver sintered bodies.
Innovation Solution
Employing a semiconductor device configuration where underlayer bonding members are formed with silver sintered bodies under pressure and upper layer bonding members are formed without pressure, using silver pastes with cobalt tungsten plating films on support members to enhance bonding properties while minimizing chip breakage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If pressure is applied during sintering to enhance bonding strength, then bonding properties improve, but semiconductor chips with different thicknesses experience uneven pressure distribution causing chip breakage
Solution Approach 1:
The patent applies different sintering pressure conditions to different bonding locations. Underlayer bonding members are formed with pressure to ensure strong bonding between support members and chips, while upper layer bonding members are formed without pressure to prevent chip breakage. This local differentiation of bonding conditions resolves the contradiction between achieving strong bonding and preventing chip damage.
2Strength
If cobalt tungsten plating films are used on support members to enhance bonding properties, then bonding strength improves, but oxidation occurs during sintering degrading the bonding properties
Solution Approach 1:
The patent forms upper layer bonding members without applying pressure during sintering, which prevents oxidation of the cobalt tungsten plating films on support members. By avoiding the harmful oxidation action in the preliminary bonding stage, the bonding properties are preserved and can be enhanced in subsequent steps without degradation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances bonding properties between support members and bonding members, reduces the likelihood of chip breakage by distributing pressure more evenly, and prevents oxidation of cobalt tungsten plating films, maintaining high bonding and adhering properties throughout the production process.
Implementation Method 1
a first and second underlayer bonding members and a first and second upper layer bonding members which are respectively made of silver sintered bodies
Implementation Method 2
reduces the likelihood of chip breakage by distributing pressure more evenly
Data Source
AI summary
In a semiconductor device, a first semiconductor chip and a second semiconductor chip are disposed between a first support member and a second support member. A first underlayer bonding material is disposed between the first semiconductor chip and the first support member. A second underlayer bonding material is disposed between the second semiconductor chip and the first support member. A first upper layer bonding material is disposed between the first semiconductor chip and the second support member. A second upper layer bonding material is disposed between the second semiconductor chip and the second support member.