Simulated EEPROM Cyclic Storage for Simpler Data Management

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Solution Overview

Problem

The data management mechanism for EEPROMs is complex due to the need for separate division of storage areas for address and state information, leading to inefficient and complex data reading processes.

Innovation Solution

A data writing and management method using a simulated EEPROM that includes a static random access memory and a flash with multiple storage groups, where data is written in a preset order and transferred between groups as needed, eliminating the need for separate storage areas and simplifying the management process.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If separate storage areas are divided for address and state information in EEPROM, then data can be stored with proper management, but the data management mechanism becomes complex

Engineering Contradiction:
Improvedata storage reliabilityVSAvoiddata management mechanism complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent combines the address storage and state information storage into the same flash memory area, eliminating the need for separate storage regions. The status label containing address and state information is stored contiguously with the data in the flash memory, simplifying the storage structure while maintaining data reliability through the unified management approach

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The flash memory is designed to serve multiple functions: storing both data and status labels (which contain address and state information) in the same memory space. This multi-functional design allows the system to manage EEPROM operations without requiring separate dedicated areas for different types of information, reducing overall system complexity

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Measurement precision

If complex addressing is used to locate storage location in flash, then data can be found accurately, but multiple clock cycles are required to read EEPROM

Engineering Contradiction:
Improvestorage location accuracyVSAvoidreading time
Core Design Contradiction:
Measurement precisionVSLoss of time

Solution Approach 1:

The status label containing address information is prepared and stored in advance alongside the data in flash memory. When reading is required, the address is already available in the status label without needing complex real-time calculation or multi-step addressing sequences, thereby reducing the number of clock cycles needed to locate and retrieve data

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The status label acts as an intermediary structure that stores address information in a format that is easily accessible during read operations. Instead of using complex addressing mechanisms, the system reads the pre-stored address from the status label to directly locate the data, simplifying the retrieval process and reducing time consumption

Inventive Principle:
Principle #24Intermediary (Mediator)

Data Source

PatentUS20260072616A1Data writing method and data management method based on simulated eeprom
Publication Date: 2026.03.12 AUTOCHIPS WUHAN CO LTD
  • US20260072616A1 patent drawing
  • US20260072616A1 patent drawing
  • US20260072616A1 patent drawing

AI summary

The present disclosure provides a data writing method and a data management method based on a simulated EEPROM, where the simulated EEPROM includes a static random access memory and a flash, the flash includes at least two storage groups, and the at least two storage groups include a first storage group and a second storage group. The data writing method includes: writing to-be-written data into a target address of the static random access memory; and writing the to-be-written data into the first storage group in a preset writing order, and determining whether the first storage group is in a full storage state; when the first storage group is in the full storage state, writing the to-be-written data into the second storage group in the preset writing order, and erasing the to-be-written data in the first storage group.