Simultaneous Structuring and Chip Singulation via Plasma Etching
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Solution Overview
Problem
Sequential structuring and separation processes for semiconductor or glass filter membranes often result in mechanical damage and stress, particularly when the bulk semiconductor is thin, leading to decreased mechanical breaking strength and limited application potential.
Innovation Solution
A method involving simultaneous structuring and separation using deep reactive ion etching (DRIE) with photolithography and plasma etching, where the substrate is fixed to a carrier and perforation structures and kerf regions are created, allowing for damage-free separation and customized membrane shapes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If sequential structuring and separation processes are used for thin semiconductor membranes, then the manufacturing process is simple, but mechanical damage and stress occur leading to decreased breaking strength
Solution Approach 1:
The patent combines the structuring process (creating perforation structures) and the separation process (dicing into individual chips) into a single simultaneous plasma etching step. This merged process eliminates the need for separate sequential operations, thereby preventing mechanical damage that would occur during intermediate handling steps while maintaining manufacturing efficiency.
Solution Approach 2:
The patent replaces mechanical dicing methods with plasma etching for the separation process. This substitution eliminates mechanical contact and associated damage (chipping, cracking) during chip separation, while the plasma process simultaneously creates the required perforation structures, achieving both structuring and separation without mechanical stress.
2Reliability
If separate dicing techniques are used before or after structuring, then the separation process is simple, but mechanical damage and amorphization occur at filter edges
Solution Approach 1:
The patent merges the structuring and separation operations into a single plasma etching step performed simultaneously. This eliminates intermediate handling steps that would require separate dicing techniques, thereby preventing mechanical damage and amorphization at filter edges while maintaining ease of manufacture through process integration.
Solution Approach 2:
The patent replaces mechanical dicing techniques with plasma etching for chip separation. This substitution eliminates mechanical contact that causes chipping and amorphization at filter edges, improving reliability and mechanical stability while the plasma process remains sufficiently simple and manufacturable.
3Length of moving object
If the bulk semiconductor is made thinner to reduce size, then the device dimensions are improved, but the probability of fracture increases significantly
Solution Approach 1:
The patent replaces mechanical dicing with plasma etching for separation. This substitution is particularly beneficial for thin substrates as it eliminates mechanical contact that would be especially damaging to thin materials with reduced fracture tolerance, thereby maintaining both thin dimensions and adequate breaking strength.
Solution Approach 2:
The patent combines structuring and separation into a single simultaneous plasma etching step. This merged process eliminates intermediate handling steps that would be particularly risky for thin substrates, reducing the probability of fracture during manufacturing while achieving the desired thin dimensions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach minimizes mechanical stress and chipping, enabling the production of thin, stress-free semiconductor or glass membranes with improved mechanical breaking strength and versatility in membrane geometry, suitable for various applications including MEMS microphones.
Implementation Method 1
plasma etching the substrate at the plurality of sites until the carrier arrangement is reached, thus creating the perforation structures within the plurality of individual semiconductor chips and simultaneously separating the individual semiconductor chips along the kerf regions
Data Source
AI summary
A hole plate and a MEMS microphone arrangement are disclosed. In an embodiment a hole plate includes a substrate with a first main surface, a second main surface, and a lateral surface and a perforation structure formed within the substrate, the perforation structure having a plurality of through-holes through the substrate, wherein the through-holes and the lateral surface are a result of a simultaneous dry etching step.