SiN Recessed-Pattern Deposition With Periodic N2 Plasma Control
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Solution Overview
Problem
Existing deposition methods face challenges in controlling the embedding property of films within recessed patterns on substrates, particularly in ensuring uniform deposition and preventing excessive film deposition on the upper sections of patterns.
Innovation Solution
A deposition method involving alternating cycles of SiN film deposition and N2 plasma treatment, where NHx groups are activated and replaced with N groups to control the adsorption sites, allowing selective adsorption of silicon-containing gases, ensuring better embedding properties by managing the penetration depth of active species within recessed patterns.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional deposition methods are used to deposit films in recessed patterns, then deposition can be performed continuously, but the embedding property and uniformity of film deposition cannot be controlled, leading to excessive film deposition on upper sections
Solution Approach 1:
The patent applies periodic action by alternating between deposition steps and plasma treatment steps. The deposition step deposits SiN film on NHx groups, while the plasma treatment step removes NHx groups from upper sections of patterns. This periodic alternation enables controlled embedding deposition in recessed patterns while maintaining productivity through automated cycling between steps.
Solution Approach 2:
The patent uses preliminary action by performing plasma treatment to remove NHx groups from upper sections before deposition. This preliminary removal of adsorption sites on upper sections prevents excessive film deposition there, while NHx groups remain on lower sections to guide selective deposition, achieving controlled embedding property.
2Manufacturing precision
If deposition is performed continuously without plasma treatment, then productivity is maintained, but uniform deposition and embedding control are not achieved
Solution Approach 1:
The patent implements periodic action through cyclic alternation of deposition and plasma treatment steps. Each cycle consists of deposition (forming SiN film on NHx groups) followed by plasma treatment (removing NHx groups from upper sections). This periodic structure achieves uniform deposition and embedding control while minimizing time loss through optimized cycle timing.
3Manufacturing precision
If plasma treatment is applied continuously, then NHx groups are removed for embedding control, but deposition cannot proceed and productivity decreases
Solution Approach 1:
The patent uses periodic action to alternate between plasma treatment (for embedding control) and deposition (for film formation). The plasma treatment step removes NHx groups from upper sections to control embedding, while the subsequent deposition step restores NHx groups and deposits SiN film. This periodic alternation balances embedding precision with productive film formation.
Solution Approach 2:
The patent maintains continuity of useful action through automated cyclic operation. The alternating deposition and plasma treatment steps are performed in sequence without manual intervention, ensuring continuous progress toward the final embedded film structure. Both plasma treatment and deposition contribute usefully to the overall embedding control objective.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively controls the embedding property of SiN films within recessed patterns, enabling high productivity and good bottom-up deposition, even for patterns with high aspect ratios, by adjusting the time allocation between deposition and plasma treatment steps.
Implementation Method 1
activating and supplying a first process gas containing NH3 to the surface of the substrate and causing NHx groups to adsorb on the surface of the substrate
Implementation Method 2
supplying a silicon-containing gas to the surface of the substrate on which the NH3 groups are adsorbed and causing the silicon-containing gas to adsorb on the NHx groups
Implementation Method 3
activating and supplying a second process gas containing N2 to the surface of the substrate on which the NHx groups are adsorbed and partly replacing the NHx groups with N groups
Data Source
AI summary
A deposition method for embedding a SiN film in a recessed pattern formed on a surface of a substrate includes: (a) activating and supplying a first process gas containing NH3 to the surface of the substrate and causing NHx groups to adsorb on the surface of the substrate, where x is 1 or 2; (b) supplying a silicon-containing gas to the surface of the substrate on which the NHx groups are adsorbed and causing the silicon-containing gas to adsorb on the NHx groups; and (c) activating and supplying a second process gas containing N2 to the surface of the substrate on which the NHx groups are adsorbed and partly replacing the NHx groups with N groups, wherein (a) and (b) are repeated, and (c) is performed every time (a) and (b) are repeated a predetermined number of times.