Silicon Nitride Dielectric Plasma Densification for Deep Feature Fill
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Solution Overview
Problem
Existing solidification processes for silicon nitride-based dielectric films in high aspect ratio features are limited in depth and do not improve the wet etch selectivity over silicon oxide, leading to incomplete filling and reduced mechanical properties.
Innovation Solution
Post-treating silicon nitride-based dielectric films with helium-containing high-energy low-dose plasma, where the energy of helium ions ranges from 1 eV to 3.01 eV and the flux density ranges from 5×10^15 ions/cm²·sec to 10.37×10^16 ions/cm²·sec, to densify the films and enhance their mechanical properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional solidification processes (steam annealing, UV irradiation, hot pressing, sintering) are used, then the dielectric film is solidified, but the solidification depth is limited and high aspect ratio features are not fully filled
Solution Approach 1:
The patent changes the energy parameters of plasma treatment from conventional low-energy processes to high-energy (100-1000 eV) plasma, which enables deeper penetration into the dielectric film and increases solidification depth to fully fill high aspect ratio features
Solution Approach 2:
The patent applies excessive plasma energy treatment beyond conventional levels, using high-energy plasma that penetrates deeper than traditional methods to ensure complete filling of high aspect ratio features, even though this requires more aggressive processing conditions
2Manufacturing precision
If standard high-density plasma (HDP) with high-energy ions is used to increase solidification depth, then the plasma treatment is applied, but the plasma does not penetrate into the silicon nitride film and solidification depth is not increased
Solution Approach 1:
The patent changes the plasma parameters by using high-energy (100-1000 eV) ions with controlled flux density, which enables penetration into the silicon nitride film. The key parameter change is the ion energy level, which overcomes the film's resistance to plasma penetration while maintaining controlled damage
Solution Approach 2:
The patent dynamically adjusts the plasma treatment parameters, specifically controlling the ion flux density and energy levels during treatment. This dynamic control allows the plasma to penetrate the film effectively without causing excessive damage, adapting the treatment intensity to the film's properties
3Manufacturing precision
If flowable films are treated with standard HDP to increase solidification depth, then plasma treatment is applied, but wet etch selectivity of silicon nitride over silicon oxide is reduced
Solution Approach 1:
The patent optimizes plasma treatment parameters by using high-energy (100-1000 eV) ions with specific flux density ranges, which achieves deep solidification while controlling the plasma exposure dose. This parameter optimization maintains wet etch selectivity by avoiding excessive plasma damage to the silicon nitride film
Solution Approach 2:
The patent applies a controlled excessive plasma treatment with high energy but limited flux density, achieving deep penetration and solidification while limiting the total plasma dose to preserve etch selectivity. The treatment is excessive in energy but controlled in total exposure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed method effectively increases the nitridation depth and improves the wet etch rate of silicon nitride-based dielectric films without damaging the films, resulting in enhanced mechanical properties and improved filling of high aspect ratio features.
Implementation Method 1
exposing the silicon nitride (SiN)-based dielectric film to helium-containing high-energy low-dose plasma in the processing chamber. Energy of helium ions in the helium-containing high-energy low-dose plasma is between 1 eV and 3.01 eV
Implementation Method 2
exposing the silicon nitride (SiN)-based dielectric film to helium-containing high-energy low-dose plasma in the processing chamber
Data Source
AI summary
A method of post-treating a silicon nitride (SiN)-based dielectric film formed on a surface of a substrate includes positioning a substrate having a silicon nitride (SiN)-based dielectric film formed thereon in a processing chamber, and exposing the silicon nitride (SiN)-based dielectric film to helium-containing high-energy low-dose plasma in the processing chamber. Energy of helium ions in the helium-containing high-energy low-dose plasma is between 1 eV and 3.01 eV, and flux density of the helium ions in the helium-containing high-energy low-dose plasma is between 5×1015 ions/cm2·sec and 1.37×1016 ions/cm2·sec.