SiN Surface Protective Film Composition for Nitride Semiconductor Current Collapse
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Solution Overview
Problem
Current nitride semiconductor devices experience significant current collapse during high-frequency operation due to electron trapping in impurity and interfacial levels, which existing SiN surface protective films fail to adequately suppress with reproducibility.
Innovation Solution
A semiconductor device with a SiN surface protective film having a composition ratio of Si/N between 0.751 and 0.801, formed using an ECR sputtering method, reduces the energy at the SiN/AlGaN interface, effectively suppressing current collapse with high reproducibility.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If SiN surface protective film is applied to suppress current collapse, then current collapse suppression effect is improved, but reproducibility of the suppression effect deteriorates
Solution Approach 1:
The patent applies parameter changes by precisely controlling the composition ratio of Si and N in the SiN surface protective film. Specifically, the Si/N atomic ratio is controlled within a narrow range of 0.751 to 0.801, which optimizes the film's ability to suppress current collapse while ensuring reproducible manufacturing results. This quantitative parameter control transforms the qualitative goal of current collapse suppression into a manufacturable specification.
2Reliability
If SiN composition and formation conditions are optimized, then current collapse suppression is improved, but device complexity increases
Solution Approach 1:
The patent applies local quality by focusing optimization on the specific region where the SiN film interfaces with the AlGaN layer. The composition ratio control (Si/N = 0.751 to 0.801) is specifically targeted at this interface region, where it most effectively suppresses current collapse by reducing interface energy and preventing electron trapping. This localized optimization avoids the need to redesign the entire device structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The specified SiN composition ratio reduces current collapse, enabling high-frequency and high-output operations while maintaining reliability by lowering the energy of the SiN/AlGaN interface.
Implementation Method 1
formed using an ECR sputtering method
Data Source
AI summary
A semiconductor device includes: a substrate; a nitride semiconductor layer on the substrate; a source electrode, a drain electrode and a gate electrode on the nitride semiconductor layer; and a SiN surface protective film covering the nitride semiconductor layer, wherein a composition ratio Si/N of Si and N that form a Si—N bond of the SiN surface protective film is 0.751 to 0.801.