Silicon Nitride Waveguide Sidewall Smoothing via Wet Etching

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Solution Overview

Problem

Conventional dry etching methods for silicon nitride waveguides result in micrometer or nanometer-range sidewall roughness, which negatively impacts the optical performance of integrated photonics-based optical gyroscopes, making them less precise and harder to manufacture.

Innovation Solution

A process flow using wet etching to fabricate silicon nitride waveguides with atomic-level smooth sidewalls, involving the formation of a silicon nitride layer on a substrate, patterning a cap layer, and performing two wet etching steps to create a waveguide core with smooth sidewalls, followed by deposition of an upper cladding layer.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If dry etching method is used to fabricate silicon nitride waveguides, then manufacturing process is conventional and easier to implement, but sidewall roughness occurs at micrometer or nanometer range which degrades optical performance

Engineering Contradiction:
Improvesidewall smoothnessVSAvoidetching process complexity
Core Design Contradiction:
Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The patent changes the etching parameter from dry etching to wet etching, fundamentally altering the etching chemistry and mechanism. This parameter change transforms the sidewall surface quality from rough (micrometer/nanometer scale) to atomically smooth, directly resolving the sidewall smoothness issue while maintaining manufacturing feasibility through standard wet etching equipment

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent applies a pre-biased mask with intentionally oversized dimensions before the wet etching process. This preliminary action compensates for the lateral etching that occurs during wet etching, ensuring that the final waveguide dimensions match the target specifications. The mask bias is calculated in advance to account for the etch profile, preventing dimensionality errors while enabling the use of wet etching for smooth sidewalls

Inventive Principle:
Principle #10Preliminary action

2Manufacturing precision

If wet etching with pre-biased mask is used, then sidewall smoothness achieves atomic-level quality, but mask dimensionality and process steps increase

Engineering Contradiction:
Improvesidewall smoothnessVSAvoidprocess steps
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent combines multiple functions into the pre-biased mask: it serves as both the pattern definition element and the dimension compensation element. By integrating the bias compensation directly into the mask design rather than requiring separate correction steps, the process complexity is minimized while achieving both smooth sidewalls and accurate dimensions

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The patent changes the mask dimension parameter intentionally (making it larger than the target waveguide width) to compensate for wet etching lateral erosion. This parameter change transforms the mask from a simple pattern template to an active compensation tool that works synergistically with the wet etching process to produce the desired final dimensions with atomically smooth sidewalls

Inventive Principle:
Principle #35Parameter changes

3Measurement precision

If conventional fiber-based optical gyroscopes are used, then high precision is achieved, but device size, cost, and assembly complexity increase significantly

Engineering Contradiction:
Improvegyroscope precisionVSAvoidassembly complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent replaces the mechanical fiber coil assembly with an integrated photonic waveguide structure fabricated on a semiconductor platform. This substitution eliminates the need for manual fiber alignment and mechanical assembly, enabling wafer-scale fabrication of gyroscopes with consistent high precision while dramatically reducing device footprint, cost, and assembly complexity

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent changes the fundamental architecture parameter from discrete fiber components to integrated waveguide circuits. This parameter change enables the gyroscope to be fabricated using standard semiconductor manufacturing processes, achieving high precision through controlled fabrication rather than manual alignment, and enabling volume production with reduced size and cost

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The method achieves ultra-low loss and compact integrated photonics-based waveguide structures suitable for high-volume production of optical gyroscopes, offering reduced size, weight, power, and cost while maintaining high precision and immunity to vibration.

Implementation Method 1

performing a second wet etching step to form the SiN layer beneath the patterned cap layer

Methodology Applied
Scientific EffectWet etching:

Data Source

PatentUS11782211B2Process flow with pre-biased mask and wet etching for smooth sidewalls in silicon nitride waveguides
Publication Date: 2023.10.10 ANELLO PHOTONICS INC
  • US11782211B2 patent drawing
  • US11782211B2 patent drawing
  • US11782211B2 patent drawing

AI summary

Aspects of the present disclosure are directed to process flow to fabricate a waveguide structure with a silicon nitride core having atomic-level smooth sidewalls achieved by wet etching instead of the conventional dry etching process. A mask is pre-biased to account for lateral etching during the wet-etching steps.