SiNC Bonding Layer for 3D Wafer Adhesion and Metal Diffusion
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current wafer bonding technologies in 3D chip development face challenges with insufficient bonding strength and metal interconnection diffusion issues, affecting the yield and performance of semiconductor products.
Innovation Solution
A semiconductor structure and method utilizing a bonding layer composed of dielectric materials like silicon (Si), nitrogen (N), and carbon (C), with controlled atomic concentration and thickness, to enhance bonding force and prevent metal diffusion at the interface.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If silicon oxide film or silicon nitride film is used as bonding film, then the bonding process can be implemented, but the bonding strength is insufficient and defects easily occur
Solution Approach 1:
The patent changes the material composition parameters of the bonding film by incorporating carbon elements (such as amorphous carbon or graphite) into the silicon oxide or silicon nitride matrix. This compositional parameter change transforms the bonding film from conventional materials to composite materials with enhanced bonding strength and reduced defect formation, directly resolving the contradiction between achieving sufficient bonding strength and maintaining high product yield.
Solution Approach 2:
The patent creates a composite bonding film by combining carbon-containing materials (amorphous carbon, graphite) with silicon oxide or silicon nitride. This composite structure provides both the mechanical strength needed for reliable bonding and the chemical stability to prevent defect formation, thereby simultaneously improving bonding strength and product yield that were previously conflicting requirements.
2Reliability
If metal interconnections are formed in the bonding film, then electrical connectivity is achieved, but diffusion phenomenon occurs at the bonding interface affecting product performance
Solution Approach 1:
The carbon-containing bonding film acts as an intermediary barrier layer between metal interconnections on opposite wafers. The carbon matrix (amorphous carbon or graphite) provides a diffusion barrier that prevents metal atoms from migrating across the bonding interface, while still allowing the bonding process to proceed and maintain electrical connectivity through the composite structure.
Solution Approach 2:
By changing the compositional parameters of the bonding film to include carbon elements, the patent creates a material with both electrical conductivity (for metal interconnection functionality) and diffusion barrier properties. This parameter change enables the bonding film to simultaneously support metal interconnections while preventing harmful metal diffusion that would otherwise degrade product performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides a higher bonding force and prevents metal material diffusion, thereby improving the quality and performance of semiconductor structures by using a dielectric bonding layer with silicon, nitrogen, and carbon, which increases the bonding strength and maintains the integrity of the semiconductor structure.
Implementation Method 1
a bonding layer composed of dielectric materials like silicon (Si), nitrogen (N), and carbon (C), with controlled atomic concentration and thickness, to enhance bonding force
Implementation Method 2
prevents metal material diffusion, thereby improving the quality and performance of semiconductor structures
Data Source
AI summary
The present invention relates to a semiconductor structure and method of forming the same. The semiconductor structure includes a first substrate and a first bonding layer on a surface of the first substrate, and the material of first bonding layer includes dielectric materials of silicon, nitrogen and carbon, and an atomic concentration of carbon in the first bonding layer gradually increases along with an increase of thickness of the first bonding layer from the surface of first substrate and reaches a maximum atomic concentration of carbon at a surface of the first bonding layer.