Single Chamber Etching Apparatus for Silicon Oxide Film
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Solution Overview
Problem
The existing dry-etching methods for silicon oxide films require multiple cycles of modification and heating processes, leading to reduced throughput due to the need for transferring wafers between separate chambers and the time spent on temperature adjustments, especially when transitioning from heating to modification processes.
Innovation Solution
An etching method and apparatus that perform both modification and heating processes in a single chamber, using a mixture gas of halogen and basicity gases to produce a reaction product, which is then selectively heated without increasing the wafer temperature, allowing for continuous processing without the need for chamber transfers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the modification process and heating process are performed using separate chambers, then the etching process can be completed, but the throughput is reduced due to the time spent in transferring the wafer between chambers
Solution Approach 1:
The patent combines the modification process chamber and heating process chamber into a single integrated chamber. The modification unit performs chemical modification of the silicon oxide film to form a reaction product, and the heating unit subsequently heats this reaction product for sublimation removal, all within the same chamber without requiring wafer transfer between separate chambers. This eliminates transfer time and improves throughput.
2Productivity
If the sequence of modification process and heating process is performed using the same chamber, then chamber transfers are eliminated, but it takes a long time to adjust the temperature of the wafer due to the difference in processing temperature
Solution Approach 1:
The heating unit is designed to selectively heat only the reaction product formed on the silicon oxide film surface, rather than heating the entire wafer. This localized heating approach allows the reaction product to reach sublimation temperature quickly for removal, while the wafer itself remains at a lower temperature suitable for the modification process, thereby eliminating the need for prolonged temperature adjustment time between processes.
Solution Approach 2:
The patent replaces conventional thermal conduction heating with infrared radiation heating for the heating unit. Infrared radiation can selectively heat the reaction product through its specific absorption characteristics without significantly heating the wafer substrate, enabling rapid and selective heating of only the material that needs to be removed, thus reducing temperature adjustment time.
3Manufacturing precision
If the wafer is heated to high temperature for the heating process, then the reaction product can be sublimated, but the wafer remains at high temperature and requires long cooling time before the next modification process
Solution Approach 1:
The heating unit selectively heats only the reaction product layer on the silicon oxide film surface through infrared radiation, which is absorbed by the reaction product but not significantly by the wafer substrate. This localized heating enables the reaction product to reach sublimation temperature for effective removal, while the wafer itself remains at a lower temperature, eliminating the need for extended cooling time before the next modification cycle.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances throughput by eliminating the need for chamber transfers and reduces the time required for temperature adjustments, enabling more efficient etching of silicon oxide films while maintaining the integrity of the wafer temperature.
Implementation Method 1
supplying a mixture gas of a halogen element-containing gas and a basicity gas onto a surface of the silicon oxide film; modifying the silicon oxide film to produce a reaction product
Implementation Method 2
heating the reaction product, wherein in heating the reaction product, the reaction product is selectively heated by a heating unit
Implementation Method 3
heating the reaction product to vaporize (or sublimate) the reaction product
Data Source
AI summary
Provided is a method of etching a silicon oxide film, which includes supplying a mixture gas of a halogen element-containing gas and a basicity gas onto a surface of the silicon oxide film; modifying the silicon oxide film to produce a reaction product; and heating the reaction product to remove the reaction product. Modifying the silicon oxide film and heating the reaction product are performed using one chamber. In heating the reaction product, the reaction product is selectively heated by a heating unit.