Low-k Dielectric Film Deposition Without Separate UV Treatment
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Solution Overview
Problem
Conventional methods for producing low-k films in integrated circuits require time-consuming and costly two-step processes involving UV treatments, which increase production costs and queue times due to the need for separate chambers for deposition and UV treatment.
Innovation Solution
A high-frequency plasma-enhanced deposition process in a single semiconductor processing chamber using silicon-and-carbon-containing precursors, where the plasma is formed at frequencies above 27 MHz, allowing for the deposition of materials with reduced dielectric constants and maintained hardness and Young's modulus, eliminating the need for additional treatments like UV treatment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional two-step processes with UV treatments are used, then low-k films can be produced, but production costs and queue times increase due to separate chambers
Solution Approach 1:
The patent combines the deposition process and UV treatment process into a single integrated chamber, eliminating the need for separate chambers and reducing production queue time. The system performs both material deposition and subsequent UV treatment sequentially within the same processing environment, thereby resolving the contradiction between maintaining manufacturing precision and improving productivity.
Solution Approach 2:
The UV treatment is performed immediately after deposition within the same chamber, preparing the film properties in advance before removal. This preliminary action ensures the low-k properties are established during the deposition-treatment sequence, avoiding the need for separate post-processing steps and reducing overall production time.
2Manufacturing precision
If conventional two-step processes with UV treatments are used, then low-k films can be produced, but production costs increase
Solution Approach 1:
The patent merges the deposition and UV treatment processes into a single chamber system, eliminating the need for multiple separate chambers and associated equipment. This consolidation reduces capital expenditure and operational costs while maintaining the ability to produce films with the required dielectric constant properties.
3Manufacturing precision
If high-frequency plasma above 27 MHz is used, then low-k dielectric films with dielectric constant below 3.0 are produced, but process complexity increases
Solution Approach 1:
The patent employs high-frequency plasma at frequencies above 27 MHz as a key process parameter to achieve low-k dielectric properties. By controlling the plasma frequency and other deposition parameters, the system produces films with dielectric constants below 3.0. The integrated chamber design simplifies the overall process complexity despite the advanced plasma parameters required.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces production costs and queue times by producing low-k dielectric films with dielectric constants below 3.0, while retaining high hardness and Young's modulus values, and simplifies the deposition process by eliminating the need for separate chambers.
Implementation Method 1
Plasma-enhanced deposition may produce films having certain characteristics
Implementation Method 2
the plasma may be formed at a frequency above 15 MHz
Data Source
AI summary
Exemplary methods of forming a silicon-and-carbon-containing material may include flowing a silicon-and-carbon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma within the processing region of the silicon-and-carbon-containing precursor. The plasma may be formed at a frequency above 15 MHz. The methods may include depositing a silicon-and-carbon-containing material on the substrate. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant below or about 3.0.