Single-Chamber Substrate Processing for Nitriding
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Solution Overview
Problem
The high manufacturing cost of semiconductor devices is increased due to the need for separate chambers for ion bombardment and film forming processes, and the requirement for vacuum transfer to prevent natural oxide film re-adhesion, which necessitates additional equipment and processes.
Innovation Solution
A substrate processing apparatus with a vacuum-exhausted chamber, a lower electrode, and upper electrodes that uses AC voltage for one process and DC pulse voltage for another, allowing for both processes to be performed in a single chamber, thereby reducing the need for separate equipment and chambers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If two separate chambers are prepared for ion bombardment and film forming processes, then the quality of substrate processing is improved, but the manufacturing cost and device complexity increase
Solution Approach 1:
The patent combines the ion bombardment chamber and film forming chamber into a single integrated chamber. The same chamber performs both the ion bombardment process (using Ar+ ions from high frequency plasma) and the film forming process, eliminating the need for separate chambers and reducing system complexity while maintaining processing quality
Solution Approach 2:
The single chamber is designed to perform multiple functions: it can conduct ion bombardment processes to remove natural oxide films and can subsequently perform film forming processes. This multi-functional design allows the same equipment to handle different substrate processing requirements without requiring separate specialized chambers
2Reliability
If vacuum transfer is used to transfer semiconductor wafer from ion bombardment chamber to film forming chamber, then natural oxide film re-adhesion is prevented, but the manufacturing cost increases due to additional vacuum transfer equipment
Solution Approach 1:
By merging the ion bombardment and film forming processes into a single chamber, the patent eliminates the need for chamber-to-chamber transfer. The semiconductor wafer remains in the same vacuum environment throughout both processes, preventing natural oxide film re-adhesion without requiring additional vacuum transfer equipment
Solution Approach 2:
The patent extracts the vacuum transfer step from the process sequence by performing both ion bombardment and film forming in the same chamber. This removes the harmful intermediate state where the wafer would be exposed to air and undergo oxide film re-adhesion
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables efficient film formation and ion bombardment in a single chamber, reducing manufacturing costs by eliminating the need for separate chambers and vacuum transfer systems, while maintaining high film quality and nitriding power.
Implementation Method 1
Ar+ ionized by high frequency plasma
Implementation Method 2
Ar+ ionized by high frequency plasma
Implementation Method 3
Ar+ ionized by high frequency plasma is struck against the surface of the semiconductor wafer
Data Source
AI summary
A substrate processing apparatus of the present disclosure includes a processing container capable of being vacuum-exhausted, a lower electrode, and an upper electrode. A target substrate can be placed on the lower electrode. The upper electrode is disposed in the processing container so as to face the lower electrode. A substrate processing method of the present disclosure includes performing a first process on the target substrate using an AC voltage without using a DC pulse voltage, and performing a second process on the target substrate using the DC pulse voltage.