Single-Chip Multi-Band LED Using V-Pit Quantum Well Structure
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Solution Overview
Problem
Conventional light emitting diodes using nitride semiconductors struggle to produce multi-band light spectra at a single chip level, relying on multiple LEDs or phosphors which are costly and inefficient, and complicate the manufacturing process.
Innovation Solution
A light emitting diode with a novel structure featuring an n-type nitride semiconductor layer, a V-pit generation layer, and a p-type nitride semiconductor layer, where the active layer includes a well layer with a first portion along a flat surface and a second portion in the V-pit, emitting light with at least two peak wavelengths without the need for phosphors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If a conventional quantum well structure with uniform well layers is used, then the light emitting diode emits monochromatic light with a single peak wavelength, but it cannot produce multi-band light spectra
Solution Approach 1:
The patent applies local quality by creating V-pits with different depths in the well layer, where shallower V-pits emit light at one wavelength while deeper V-pits emit at different wavelengths. This spatial variation in well layer depth within the active region enables multi-band light emission from a single LED chip, resolving the contradiction between spectrum range and emission efficiency.
2Adaptability or versatility
If multiple light emitting diodes with different monochromatic emissions are used to create white light, then multi-band light spectra can be achieved, but the device complexity and manufacturing cost increase
Solution Approach 1:
The patent merges multiple light emission functions into a single LED chip by incorporating V-pits of varying depths within one active layer. This consolidation replaces the need for multiple separate monochromatic LEDs, reducing device complexity while maintaining multi-band light spectrum capability.
Solution Approach 2:
The active layer is designed with multi-functionality by including V-pits that emit different wavelengths simultaneously. A single LED structure performs the function of multiple LEDs with different emission characteristics, achieving universal light spectrum coverage from one device.
3Adaptability or versatility
If phosphors are used to convert light wavelength to achieve white light, then multi-band light spectra can be produced, but efficiency decreases due to Stoke's shift and additional manufacturing steps are required
Solution Approach 1:
The patent extracts the wavelength conversion function entirely by eliminating phosphors from the system. Instead of using phosphors to convert light wavelengths, the invention directly generates multi-band light through V-pits of different depths, removing the source of energy loss associated with Stoke's shift and simplifying the manufacturing process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the production of multi-band light spectra at a single chip level, eliminating the need for multiple LEDs or phosphors, thereby simplifying the manufacturing process and improving efficiency.
Implementation Method 1
The active layer emits light having at least two peak wavelengths at a single chip level
Data Source
AI summary
A light emitting diode includes an n-type nitride semiconductor layer, a V-pit generation layer located over the n-type nitride semiconductor layer and having a V-pit, an active layer located on the V-pit generation layer, and a p-type nitride semiconductor layer located on the active layer. The active layer includes a well layer, which includes a first well layer portion formed along a flat surface of the V-pit generation layer and a second well layer portion formed in the V-pit of the V-pit generation layer. The active layer emits light having at least two peak wavelengths at a single chip level.