Single Crystal Electronic Devices with Enhanced Strain Interface Regions
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional RF technology in mobile devices faces limitations, leading to drawbacks in performance and future growth, particularly with the coexistence of new and legacy standards and increasing data rate requirements.
Innovation Solution
Incorporating scandium as an impurity in single crystal electronic devices, such as group III nitride-based devices, to adjust piezoelectric properties by modifying the crystal lattice's interatomic spacing and creating enhanced strain interface regions, which can be applied to various devices like resonators and transistors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional RF technology is used in mobile devices, then device compatibility with legacy standards is maintained, but performance limitations and inability to meet higher data rate requirements occur
Solution Approach 1:
The patent applies parameter changes by modifying the piezoelectric properties of single crystal devices through controlled impurity incorporation. By adjusting the concentration and type of impurities (such as scandium), the patent optimizes key parameters including piezoelectric coefficient, interatomic spacing, and strain conditions to simultaneously achieve high performance and broad compatibility across different communication standards
Solution Approach 2:
The patent employs composite materials by creating single crystal structures with deliberately incorporated impurity elements. These composite single crystal materials combine the base crystal lattice with specific impurity atoms (e.g., scandium in group III nitride), resulting in enhanced piezoelectric properties that enable both legacy and next-generation RF performance
2Reliability
If impurities are incorporated to adjust piezoelectric properties, then device performance is improved, but manufacturing complexity increases
Solution Approach 1:
The patent applies preliminary action by incorporating impurities during the crystal growth phase rather than attempting post-growth modification. By introducing impurity elements into the precursor materials or growth environment before crystal formation, the desired piezoelectric properties are built into the crystal structure during its creation, simplifying the overall manufacturing process
Solution Approach 2:
The patent utilizes parameter changes in the crystal growth process to control impurity incorporation. By adjusting growth temperature, pressure, and precursor ratios, the patent achieves precise control over impurity concentration and distribution, thereby tuning piezoelectric properties without requiring complex post-processing steps
3Reliability
If impurity incorporation is used to create enhanced strain interface regions, then piezoelectric properties are improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent applies local quality by creating distinct regions with different impurity concentrations within the single crystal structure. By establishing graded impurity profiles or localized high-concentration zones at specific interfaces, the patent generates controlled strain regions that enhance piezoelectric properties at critical locations while maintaining overall crystal integrity
Solution Approach 2:
The patent uses preliminary action to pre-establish the impurity distribution pattern during crystal growth. By designing the growth sequence and precursor delivery to automatically create the desired impurity gradient or localized concentrations, the patent achieves precise strain interface control without requiring complex post-growth processing
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the manufacturing of reliable and cost-effective single crystal electronic devices with improved physical characteristics, such as enhanced photon velocity and charge density, enabling better performance in communication and computing devices.
Implementation Method 1
incorporating impurities can change the interatomic spacing in the crystal lattice of the single crystal material and generate additional strain
Implementation Method 2
one can adjust the piezoelectric properties of single crystal devices
Data Source
AI summary
A method of manufacture and resulting structure for a single crystal electronic device with an enhanced strain interface region. The method of manufacture can include forming a nucleation layer overlying a substrate and forming a first and second single crystal layer overlying the nucleation layer. This first and second layers can be doped by introducing one or more impurity species to form a strained single crystal layers. The first and second strained layers can be aligned along the same crystallographic direction to form a strained single crystal bi-layer having an enhanced strain interface region. Using this enhanced single crystal bi-layer to form active or passive devices results in improved physical characteristics, such as enhanced photon velocity or improved density charges.