Single-Crystal Oxide Semiconductor Layer Growth at Low Temperature
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current oxide semiconductor layers used in transistors are mostly amorphous and face challenges with electrical and chemical stability, limiting their field-effect mobility.
Innovation Solution
A method for manufacturing a single crystalline semiconductor layer is developed, involving multiple unit cycles with metal precursor and reactive gas dosing and purging operations, allowing for the formation of high-quality semiconductor layers at low temperatures, suitable for use in transistors and light-emitting diodes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If oxide semiconductor layers are used as channel layers, then transparency is improved, but electrical stability and field-effect mobility deteriorate
Solution Approach 1:
The patent changes the structural parameter of the oxide semiconductor layer from amorphous to single-crystalline form. This parameter change fundamentally alters the material's properties, achieving both high transparency and excellent electrical stability with high field-effect mobility, thereby resolving the contradiction between transparency and electrical reliability
Solution Approach 2:
The patent uses a composite structure consisting of an oxide semiconductor single-crystalline layer formed on a non-oxide single-crystalline substrate. This composite approach allows the oxide layer to provide transparency while the single-crystalline structure provides electrical stability and high mobility, resolving the contradiction between these two properties
2Temperature
If single crystalline semiconductor layer is grown at low temperature, then manufacturing cost is reduced, but crystal quality may deteriorate
Solution Approach 1:
The patent employs a two-stage temperature parameter change strategy: first forming a buffer layer at a lower temperature (e.g., 700-900°C), then growing the oxide semiconductor single-crystalline layer at a higher temperature (e.g., 900-1100°C). This dynamic parameter adjustment enables high crystal quality to be achieved while controlling overall manufacturing temperature, resolving the contradiction between temperature reduction and crystal quality maintenance
Solution Approach 2:
The patent performs preliminary action by forming a single-crystalline buffer layer on the substrate before growing the oxide semiconductor layer. This buffer layer serves as a high-quality template that enables subsequent epitaxial growth of the oxide layer with excellent crystal quality, even when the overall process temperature is kept relatively low, thus resolving the contradiction between low temperature and high crystal quality
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the creation of semiconductor layers with excellent crystal quality and improved stability, even at low temperatures, enhancing the performance of semiconductor devices.
Implementation Method 1
a metal precursor pressurized dosing operation in which a metal precursor is adsorbed on a surface of a single crystalline substrate by supplying the metal precursor onto the single crystalline substrate
Implementation Method 2
a reactive gas supplying operation in which a reactive gas is supplied into the chamber to cause a reaction of the reactive gas with the metal precursor adsorbed on the single crystalline substrate
Data Source
AI summary
Provided are a method for manufacturing a single-crystal semiconductor layer. The method of manufacturing the single crystalline semiconductor layer includes performing a unit cycle multiple times, wherein the unit cycle includes a metal precursor pressurized dosing operation in which a metal precursor is adsorbed on a surface of a single crystalline substrate by supplying the metal precursor onto the single crystalline substrate while an outlet of a chamber in which the single crystalline substrate is loaded is closed such that a reaction pressure in the chamber is increased; a metal precursor purge operation; a reactive gas supplying operation in which a reactive gas is supplied into the chamber to cause a reaction of the reactive gas with the metal precursor adsorbed on the single crystalline substrate after the metal precursor purge operation; and a reactive gas purge operation.