Single Crystal Wire Manufacturing via Electric Discharge Machining

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Solution Overview

Problem

Existing methods for manufacturing high-purity single crystal wires, such as copper, silver, and aluminum, face challenges in maintaining the unidirectional crystal structure during machining, leading to mechanical stress and deterioration in sound quality, particularly in audio and video systems.

Innovation Solution

A method involving growing a metal single crystal using a seed crystal through the Czochralski or Bridgman method, followed by cutting and shaping into a disc form using electric discharge machining, and then forming into wires or other shapes to minimize stress and preserve the crystal structure, which is then polished and coated for use in high-quality cables.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If conventional copper production methods are used to mass produce wires, then productivity is improved, but the purity of the copper wire decreases to 99.9% due to oxygen and sulfur contamination

Engineering Contradiction:
Improvemass production capabilityVSAvoidcopper purity
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent segments the copper production process into separate stages: initial mass production of copper ingots (3N purity) followed by a separate refining process using vacuum induction melting and argon atmosphere treatment to achieve 4N or 5N purity. This allows mass production capabilities to be maintained while achieving high purity through a dedicated refinement stage.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent employs an argon atmosphere during the vacuum induction melting process to prevent re-oxidation of copper and to facilitate the removal of oxygen and sulfur impurities. The inert argon environment enables the copper to be refined to 4N or 5N purity without picking up additional contaminants, thus resolving the contradiction between mass production and high purity requirements.

Inventive Principle:
Principle #39Inert atmosphere (Inert environment)

2Ease of manufacture

If oxygen is blown during copper melting to improve workability, then ease of manufacture is improved, but copper purity decreases due to oxygen and cuprous oxide contamination

Engineering Contradiction:
ImproveworkabilityVSAvoidcopper purity
Core Design Contradiction:
Ease of manufactureVSManufacturing precision

Solution Approach 1:

The patent performs preliminary deoxidation during the initial copper melting stage, removing oxygen and cuprous oxide impurities before the copper is cast into ingots. This preliminary action ensures that the copper ingots have reduced oxygen content (10-200 ppm) while maintaining good workability, and prevents further contamination in subsequent processing stages.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent uses an argon atmosphere during the vacuum induction melting process to create an inert environment that prevents re-oxidation of copper. This allows the copper to be refined to high purity (4N or 5N) without the need to blow oxygen, thus resolving the contradiction between ease of manufacture and copper purity.

Inventive Principle:
Principle #39Inert atmosphere (Inert environment)

3Manufacturing precision

If the single crystal structure is stretched linearly to improve sound quality, then sound purity is improved, but mechanical stress and heat are generated that deteriorate the crystal structure

Engineering Contradiction:
Improvesound qualityVSAvoidcrystal structure integrity
Core Design Contradiction:
Manufacturing precisionVSStability of the object's composition

Solution Approach 1:

The patent replaces mechanical linear stretching processes with a chemical/thermal treatment process involving heating to 700-900°C followed by slow cooling at 1-5°C per minute. This substitution eliminates mechanical stress on the crystal structure while still achieving the desired unidirectional crystal orientation and improved sound quality through controlled thermal processes.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent changes the processing parameters from mechanical stretching to controlled thermal treatment, heating the copper to 700-900°C and then cooling at a controlled rate of 1-5°C per minute. This parameter change allows the crystal structure to be optimized for sound quality without generating mechanical stress, as the thermal process enables atomic rearrangement without mechanical deformation.

Inventive Principle:
Principle #35Parameter changes

4Manufacturing precision

If high-purity copper is produced to increase sound purity, then sound quality is improved, but direct current resistance increases which reduces cable energy

Engineering Contradiction:
Improvesound purityVSAvoiddirect current resistance
Core Design Contradiction:
Manufacturing precisionVSLoss of energy

Solution Approach 1:

The patent optimizes the oxygen content parameter to a specific range (10-200 ppm) through controlled refining processes. This parameter optimization achieves high sound purity while maintaining acceptable electrical conductivity, as the controlled oxygen level prevents excessive increase in resistance compared to completely oxygen-free copper, thus resolving the contradiction between sound quality and energy loss.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The method produces single-crystal wires with a unidirectional crystal structure, reducing mechanical stress and enhancing sound quality by maintaining the purity and structural integrity of the metal, resulting in improved sound clarity and resistance to external noise and interference.

Implementation Method 1

heating and melting the metal placed in the growth crucible

Methodology Applied
Scientific EffectMelting: Melting

Implementation Method 2

growing a single crystal using a metal crystal as a seed by Czochralski or Bridgman method

Methodology Applied
Scientific EffectCrystallisation: Crystallisation

Implementation Method 3

rapidly cooling the melted copper

Methodology Applied
Scientific EffectCooling: Cooling

Implementation Method 4

cutting the grown single crystal by electric discharge machining

Methodology Applied
Scientific EffectElectrical Discharge Machining: Electrical Discharge Machining

Data Source

PatentUS8663388B2Method of manufacturing single crystal wire and other single crystal metallic articles
Publication Date: 2014.03.04 KOREA ELECTROTECH RES INST
  • US8663388B2 patent drawing
  • US8663388B2 patent drawing
  • US8663388B2 patent drawing

AI summary

Disclosed are a single crystal wire and other single crystal articles, and a manufacturing method thereof. The method comprises the steps of: placing into a growth crucible at least one metal selected from the group consisting of gold, copper, silver, aluminum and nickel; heating and melting the metal placed in the growth crucible; growing a single crystal using metal crystal as a seed by Czochralski or Bridgman method; cutting the grown single crystal by electric discharge machining; and machining the cut single crystal and producing a wire or other articles such as a ring. In the method, the grown metal single crystal is cut into a disc-shaped piece by electric discharge machining. The piece is transformed into a single crystal wire or other articles by wire-cut electric discharge machining, and the single crystal wire can be used as a ring, a pendant, or a wire for high-quality cables for audio and video systems. Also, the single crystal formed into the disc-shaped piece by electric discharge machining can be used as a substrate and a target for deposition.