Single Diffusion Break Void for Semiconductor Isolation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
As semiconductor device scale decreases and density increases, effective electrical isolation between adjacent components becomes crucial to prevent unwanted electrical coupling, but existing methods struggle to maintain consistency and efficiency in isolation as device size shrinks.
Innovation Solution
A method of fabricating a single diffusion break on a fin by forming gate structures, a middle dummy gate structure, spacers, and an isolating layer to create a recess with a void, which serves as an embedded isolating layer between active regions, ensuring effective electrical isolation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional isolation methods are used, then electrical isolation between adjacent components is achieved, but device density and consistency deteriorate as scale decreases
Solution Approach 1:
The patent transitions from planar isolation structures to a three-dimensional configuration by forming a recess into the substrate and filling it with isolating material. This vertical dimension addition allows isolation structures to extend below the surface, providing effective electrical isolation while preserving surface area for active components, thereby maintaining high device density.
Solution Approach 2:
The isolating structure is nested within the substrate by forming a recess and embedding the isolating material inside it. This nested configuration allows the isolation structure to be contained within the device footprint without adding lateral dimensions, enabling effective isolation while maintaining compact device layout and high density.
2Productivity
If device scale decreases, then device density increases, but isolation consistency deteriorates
Solution Approach 1:
The patent applies different properties to different regions: the recess provides localized physical separation, the isolating material provides electrical insulation, and the void provides mechanical stress relief. This localized quality differentiation ensures consistent isolation performance across devices of varying scales by addressing multiple isolation requirements simultaneously in the same structural framework.
Solution Approach 2:
The isolation structure combines multiple materials with different functions: the substrate material, the recess structure, the isolating material, and the void space. This composite approach creates a multi-functional isolation system that maintains consistency across different device scales by providing both electrical isolation and mechanical stability through material combination rather than relying on a single material property.
Data Source
AI summary
A method of fabricating a single diffusion break includes providing a fin with two gate structures crossing the fin and a middle dummy gate structure crossing the fin, wherein the middle dummy gate structure is sandwiched by the gate structures. Later, numerous spacers are formed and each spacer respectively surrounds the gate structures and the middle dummy gate structure. Then, the middle dummy gate structure, and part of the fin directly under the middle dummy gate structure are removed to form a recess. Finally, an isolating layer in the recess is formed to close an entrance of the recess so as to form a void embedded within the recess.