Single Field Plate Layout for Nitride Semiconductor Breakdown Control
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Solution Overview
Problem
The manufacturing process of nitride-based semiconductor devices with multiple field plates is complex and costly, leading to potential alignment errors and suboptimal electrical characteristics due to the complexity of the multi-field-plate structure.
Innovation Solution
A nitride-based semiconductor device design featuring a single field plate with a unique profile formed by recesses in a dielectric layer, simplifying the manufacturing process and reducing alignment errors, while maintaining effective electrical field distribution and device performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multiple field plates are used to improve electrical field distribution, then electrical characteristics are improved, but manufacturing complexity and cost increase
Solution Approach 1:
The patent combines multiple separate field plates into a single integrated field plate structure. This single field plate includes a first field plate portion extending from the gate electrode toward the source electrode, and a second field plate portion extending from the gate electrode toward the drain electrode, merging the functions of multiple field plates into one unified structure that simplifies manufacturing while maintaining electrical field distribution control.
Solution Approach 2:
The patent introduces a vertical dimension to the field plate design by forming the field plate at different heights above the semiconductor layers. The field plate structure includes portions at different vertical levels, allowing it to control electric fields in three-dimensional space while being formed as a single integrated structure, thus resolving the contradiction between electrical performance and manufacturing complexity.
2Reliability
If multiple field plates are used to control electric field distribution, then breakdown voltage is improved, but alignment errors increase
Solution Approach 1:
The patent merges multiple field plates into a single field plate structure that is formed in one fabrication step, eliminating the need for multiple alignment operations. The single field plate includes both the first field plate portion and the second field plate portion as integrated components, removing alignment errors between separate structures while maintaining the ability to control electric field distribution and improve breakdown voltage.
3Ease of manufacture
If a single field plate is used to simplify manufacturing, then production cost is reduced, but electrical field distribution may be suboptimal
Solution Approach 1:
The patent uses vertical dimensionality to achieve optimal electrical field distribution within a single field plate structure. By forming the field plate at different heights above the semiconductor layers, with portions extending at different vertical levels, the design maintains effective electric field control while simplifying manufacturing to a single integrated structure.
Solution Approach 2:
The patent applies different geometric configurations to different portions of the single field plate. The first field plate portion has specific dimensions and positioning relative to the source electrode, while the second field plate portion has different dimensions and positioning relative to the drain electrode. This local differentiation allows optimal electrical field distribution in different regions while maintaining manufacturing simplicity.
4Reliability
If multiple field plates are used to enhance device performance, then electrical characteristics are improved, but production cost increases
Solution Approach 1:
The patent combines multiple field plates into a single integrated field plate structure that can be formed in one fabrication step, reducing production cost while maintaining the electrical performance benefits of having separate field plate portions. The single field plate includes both the first field plate portion extending toward the source and the second field plate portion extending toward the drain, achieving cost-effective device performance enhancement.
Data Source
AI summary
A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a source electrode, a drain electrode, a gate electrode and a single field plate. The source electrode, the drain electrode, and the gate electrode are disposed on the second nitride-based semiconductor layer. The gate electrode is between the source and drain electrodes. The single field plate is disposed over the gate electrode and extends toward the drain electrode. The field plate has a first end part, a second end part and the central part. The first and the second end parts are located at substantially the same height. Portions of the central part are in a position lower than that of the first and second end parts, and the first end part extends laterally in a length greater than a width of the gate electrode.