Single-Gate FET Dual-Channel Layout for Higher Drive Current
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Solution Overview
Problem
Existing single-gate field effect transistors have limited drive current due to the number of carriers that can be stored in a single channel, and dual-channel transistors increase off-state current, complicating connection and performance.
Innovation Solution
A single-gate field effect transistor with a depletion-mode second channel that forms spontaneously when off, not connecting the source and drain, and injects carriers into a first channel of the same polarity when on, enhancing on-state current without increasing off-state current or complexity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If a dual-channel transistor is formed using dual-gate control to increase drive current, then the drive current increases, but the off-state current increases and connection complexity increases
Solution Approach 1:
The channel region is divided into two independent channels: a first channel that connects source and drain for current conduction, and a second channel that is spatially separated from source and drain to store carriers without contributing to off-state leakage. This segmentation allows each channel to perform its specific function independently.
Solution Approach 2:
The second channel is pre-formed as a depletion-mode channel that spontaneously stores carriers in the off-state before the transistor is activated. This preliminary carrier storage prepares the system to provide enhanced drive current when turned on, without requiring additional gates or complex control mechanisms.
2Power
If a dual-channel transistor is formed using dual-gate control to increase drive current, then the drive current increases, but the connection complexity increases
Solution Approach 1:
The device structure is segmented into distinct functional regions: the first channel for conduction and the second channel for carrier storage. This clear segmentation simplifies the overall device architecture and makes it easier to fabricate and connect compared to integrated dual-gate structures.
Solution Approach 2:
The carrier storage function is extracted from the conduction path by creating a separate second channel that is spatially separated from the source and drain regions. This extraction allows carrier storage to occur independently without adding complexity to the source-drain connection architecture.
3Power
If the channel width (W) to channel length (L) ratio is increased to increase drive current, then the drive current increases, but the off-state current also increases
Solution Approach 1:
Different regions of the channel have different operational characteristics: the first channel maintains enhancement-mode properties for controlled conduction, while the second channel has depletion-mode properties with higher carrier density for storage. This local quality differentiation allows each region to optimize its function without compromising the other.
Solution Approach 2:
The channel is segmented into two modes of operation within a single gate structure: an enhancement-mode first channel and a depletion-mode second channel. This segmentation enables independent optimization of on-state and off-state characteristics without requiring multiple gates or increasing the overall W/L ratio.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution increases drive current significantly without adding an additional control gate, maintaining the simplicity of a single-gate transistor and avoiding increased off-state current, by pre-storing carriers in the second channel for unidirectional or bidirectional injection, thus improving transistor performance.
Implementation Method 1
an insulating layer provided on a surface of the active layer close to one side of the second channel, wherein the second channel is formed by the carrier generated at the channel region close to the insulating layer by the injected charges in the insulating layer through electrostatic induction
Data Source
AI summary
The present invention provides a single-gate field effect transistor device and a method for modulating the drive current thereof. The field effect transistor comprises an active layer, a source region and a drain region formed at two sides of the active layer, and a channel region located between the source region and the drain region. The field effect transistor device is configured as follows: when the transistor is turned off, a second channel of depletion-mode spontaneously forms in the channel region, and the second channel does not connect the source region and the drain region; when the transistor is turned on, the second channel and a first channel of the same polarity as the second channel are formed in the channel region; at least one of the first channel and the second channel injects carriers into the other channel so that current conduction occurs between the source and the drain and the carriers of the second channel contribute to the on-state current of the transistor.