Single-Layer Thin Film Transistor for Interface Stability
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Solution Overview
Problem
Existing thin film transistors face challenges in achieving improved structural stability and electrical characteristics, particularly in the integration of channel and source/drain electrodes with the gate electrode, which affects their performance and manufacturing complexity.
Innovation Solution
A thin film transistor design where the channel part, source/drain electrodes, and gate electrode are formed as a single layer, potentially from the same conductive metal oxide or semiconductor material, with the source/drain electrodes integrated in a single body with the channel part, and a gate electrode spaced apart, allowing for improved structural stability and simplified manufacturing processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the channel part, source/drain electrodes, and gate electrode are formed as separate layers, then the manufacturing process allows for independent optimization of each component, but the structural stability at the interface between source/drain electrodes and channel part deteriorates
Solution Approach 1:
The channel part, source/drain electrodes, and gate electrode are formed as a single layer structure rather than separate layers. This merging of previously distinct components into one continuous layer eliminates interface problems between source/drain electrodes and channel part, providing structural stability while maintaining manufacturing simplicity through a single-layer formation process
2Stability of the object's composition
If the channel part, source/drain electrodes, and gate electrode are formed as a single layer, then the structural stability at the interface is improved, but the ability to independently optimize each component's properties is reduced
Solution Approach 1:
The single layer is patterned to create different functional regions (channel part, source/drain electrodes, gate electrode) with distinct local properties. Each region maintains its specific function while being part of the continuous single layer structure, achieving both interface stability and functional differentiation through local property variation
3Manufacturing precision
If multiple layers are used for channel part, source/drain electrodes, and gate electrode, then each component can be independently formed and optimized, but the manufacturing process complexity increases
Solution Approach 1:
The invention combines the formation of channel part, source/drain electrodes, and gate electrode into a single layer formation process, reducing the number of deposition and patterning steps required while maintaining the ability to define distinct functional regions through pattern design
4Reliability
If separate layers are used for channel part and source/drain electrodes, then contact resistance can be independently controlled, but the interface between them exhibits structural instability
Solution Approach 1:
The channel part and source/drain electrodes are formed as a continuous single layer, eliminating the physical interface between them. This merging removes the source of structural instability at the interface while maintaining electrical functionality through the continuous conductive path provided by the single layer structure
Data Source
AI summary
Provided is a thin film transistor. The thin film transistor includes a substrate, a channel part extending on the substrate in a first direction parallel to an upper surface of the substrate, source/drain electrodes connected to both ends of the channel part in the first direction, and a gate electrode spaced apart from the channel part in a second direction intersecting the first direction and parallel to the upper surface of the substrate. Each of the channel part, the source/drain electrodes, and the gate electrode is provided as a single layer.