Single-Level Cell Program Timing With Charge Pump Skipping
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Solution Overview
Problem
Existing non-volatile memory technologies face challenges in achieving faster data reading and programming speeds while maintaining data integrity, particularly due to inefficiencies in the preliminary period of program operations and high current consumption during charge pump settings and resets.
Innovation Solution
The implementation of a control circuit that applies a series of program voltage pulses with a preliminary period optimized by skipping charge pump settings and resets after the first pulse, reducing unnecessary time and current consumption without increasing failure bit counts.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If charge pump settings and resets are performed before each program voltage pulse, then programming reliability is maintained, but programming speed decreases and power consumption increases
Solution Approach 1:
The patent extracts the charge pump setting and reset operations from the preliminary period before each program voltage pulse. By removing these operations from the critical programming path and performing them only when necessary (e.g., on the first pulse or after idle periods), the patent eliminates unnecessary delays and power consumption while maintaining the reliability benefits when actually needed.
Solution Approach 2:
The patent implements periodic charge pump settings and resets based on the programming sequence pattern. Instead of performing these operations before every pulse, the system performs them periodically - specifically on the first pulse of a sequence and after idle periods - allowing continuous programming without repeated setup overhead while maintaining reliability through periodic reinitialization.
2Reliability
If charge pump settings and resets are performed before each program voltage pulse, then programming reliability is maintained, but power consumption increases
Solution Approach 1:
The patent removes unnecessary charge pump setting and reset operations from the programming sequence, extracting only the essential operations that contribute to reliability. By performing these operations selectively rather than repeatedly, the patent significantly reduces the energy consumed by the charge pump while maintaining the necessary reliability guarantees.
Solution Approach 2:
The patent applies partial action by performing charge pump settings and resets only to the extent necessary for reliability - specifically on the first pulse and after idle periods - rather than performing excessive actions before every single program pulse. This partial approach eliminates wasted energy while preserving the reliability benefits.
3Reliability
If preliminary period time is increased, then programming reliability is improved, but programming speed decreases
Solution Approach 1:
The patent skips the preliminary period charge pump settings and resets for subsequent program voltage pulses after the first one. By rushing through these unnecessary operations and eliminating them from the timing-critical path, the patent minimizes the preliminary period duration and maximizes programming speed while maintaining reliability through selective reinitialization.
Data Source
AI summary
A memory apparatus and method of operation are provided. The apparatus includes memory cells connected to word lines and disposed in strings and configured to retain a threshold voltage corresponding to one of a plurality of data states. A control means is coupled to the word lines and the strings and is configured to successively apply one of a series of pulses of a program voltage to each selected one of the word lines to program the memory cells connected thereto during a program operation. The control means is also configured to utilize a time of a preliminary period of the program operation based on the one of the series of pulses of the program voltage being applied. The preliminary period of the program operation is before the series of pulses of the program voltage are applied to each selected one of the plurality of word lines.


