Single Mask Isolation for SDB and End Regions in IC Fins
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Solution Overview
Problem
Conventional methods for forming integrated circuit (IC) structures with isolation features require multiple masks, limiting the ability to create single diffusion breaks (SDB) and end isolation regions efficiently due to design rule constraints and structural differences across various components.
Innovation Solution
A method involving a mask with specific openings to expose and remove gate structures and fins, allowing for the formation of insulators on both SDB and STI regions using a single mask, thereby reducing the number of masks needed and enhancing processing efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If multiple masks are used to form different isolation regions, then each isolation structure can be precisely formed, but the device complexity and manufacturing process become more complex
Solution Approach 1:
The patent combines multiple isolation region formation steps into a single mask structure. The mask includes first, second, and third isolation regions formed simultaneously, eliminating the need for separate masks for each isolation type. This merging approach maintains manufacturing precision while significantly reducing device complexity and process steps.
Solution Approach 2:
The single mask structure serves multiple functions by forming different types of isolation regions (first, second, and third isolation regions) in one operation. The mask is designed with varying thicknesses and material compositions that enable it to perform the functions of multiple specialized masks, thereby reducing overall process complexity.
2Manufacturing precision
If multiple masks are used to form different isolation regions, then each isolation structure can be precisely formed, but the manufacturing process time increases
Solution Approach 1:
The patent merges multiple isolation formation operations into a single parallel process step. By forming first, second, and third isolation regions simultaneously using one mask, the manufacturing time is reduced while maintaining the precision required for each isolation type through the mask's differentiated structure.
Solution Approach 2:
The mask is pre-configured with different thicknesses and material properties in different regions before the formation process. This preliminary structuring allows all isolation regions to be formed correctly in a single operation, eliminating the need for sequential processing steps and reducing overall manufacturing time.
3Adaptability or versatility
If structural features are added to protect previously-formed structures, then isolation regions can be formed at different locations, but the device complexity increases
Solution Approach 1:
The single mask structure is designed to be universally applicable for forming multiple types of isolation regions at different locations. By integrating protection features and isolation region definitions into one mask, the system achieves location flexibility without adding separate protective structural features, thereby reducing device complexity.
Data Source
AI summary
The disclosure relates to forming single diffusion break (SDB) and end isolation regions in an integrated circuit (IC) structure, and resulting structures. An IC structure according to the disclosure includes: a plurality of fins positioned on a substrate; a plurality of gate structures each positioned on the plurality of fins and extending transversely across the plurality of fins; an insulator region positioned on and extending transversely across the plurality of fins between a pair of the plurality of gate structures; at least one single diffusion break (SDB) region positioned within the insulator region and one of the plurality of fins, the at least one SDB extending from an upper surface of the substrate to an upper surface of the insulator region; and an end isolation region positioned laterally adjacent to a lateral end of one of the plurality of gate structures.