Single-Mask Well Layout for Multi-Threshold Voltage Integration
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Solution Overview
Problem
The complex manufacturing processes required to form semiconductor devices with different threshold voltages on a single substrate are costly and inefficient, often resulting in device damage due to multiple masking and implantation steps.
Innovation Solution
A semiconductor structure is formed using a single well mask with slits of varying widths to create well regions with different dopant types and concentrations, allowing for the control of threshold voltage without the need for multiple masking steps, by forming a plurality of first regions separated by second regions within the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If multiple masking and implantation steps are used to form semiconductor devices with different threshold voltages, then device threshold voltage control is achieved, but manufacturing complexity and cost increase, and device damage occurs
Solution Approach 1:
The well region is segmented into multiple doped regions (first doped well regions and second doped well regions) with different dopant types or concentrations. This segmentation allows different threshold voltages to be achieved within a single well structure, eliminating the need for multiple separate implantation steps while maintaining precise threshold voltage control for different semiconductor devices.
Solution Approach 2:
Multiple implantation steps that would traditionally be performed separately are merged into a single implantation process. By pre-configuring the well region with multiple doped regions having different dopant characteristics, the patent combines what would normally require multiple masking and implantation cycles into one step, reducing manufacturing complexity and device damage.
2Manufacturing precision
If multiple masking and implantation steps are used to form semiconductor devices with different threshold voltages, then device threshold voltage control is achieved, but device damage increases
Solution Approach 1:
The well region is segmented into multiple doped regions (first doped well regions and second doped well regions) with different dopant types or concentrations. This segmentation allows different threshold voltages to be achieved within a single well structure, eliminating the need for multiple implantation steps while maintaining precise threshold voltage control for different semiconductor devices.
Solution Approach 2:
The well region is prepared in advance with multiple doped regions having different dopant types or concentrations before the actual device formation process. This preliminary configuration of the well structure eliminates the need for subsequent multiple implantation steps, thereby preventing device damage that would occur during repeated masking and implantation cycles.
3Area of stationary object
If devices with differing threshold voltages are formed in close proximity, then substrate area is reduced, but manufacturing precision requirements increase
Solution Approach 1:
Different regions of the well structure are given different doping characteristics (different dopant types or concentrations) to create local quality variations. The first doped well regions have one set of doping properties while the second doped well regions have different doping properties, allowing each region to be optimized for specific threshold voltage requirements while maintaining precise control despite close proximity of devices.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of semiconductor devices with unique threshold voltages by controlling the geometry of the well regions, reducing fabrication costs and minimizing device damage, while achieving efficient and precise voltage control.
Implementation Method 1
performing a doping process on the semiconductor substrate through the single well mask to form a well region
Data Source
AI summary
The present disclosure relates to a semiconductor structure that includes a well region and a semiconductor substrate. The well region is disposed within the semiconductor substrate. The well region includes a plurality of first regions separated by a plurality of second regions, where the plurality of first regions is of a first doping and the plurality of second regions are of a second doping different than the first doping. A gate electrode overlies the well region where the gate electrode is disposed laterally over a portion of the plurality of first regions and a portion of the plurality of second regions.