Single-Photon Detector Diffraction Pattern for Red-NIR Absorption
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Solution Overview
Problem
Existing single photon detection devices face challenges in efficiently absorbing and detecting light in wavelength bands such as red and near-infrared regions due to limited light absorption efficiency in semiconductor substrates.
Innovation Solution
Incorporation of diffraction patterns with a specific pitch of 0.4 to 0.7 micrometers in the photodetection layer to enhance light absorption efficiency by diffracting incident light, particularly in red and near-infrared wavelength bands, while maintaining detection efficiency in well-absorbed bands.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If diffraction patterns are added to enhance light absorption in red and near-infrared bands, then light absorption efficiency is improved, but device complexity increases
Solution Approach 1:
The device is segmented into distinct functional regions: a photodetection layer with diffraction patterns for red/near-infrared detection, and a highly doped region for blue/green detection. This segmentation allows each region to be optimized for specific wavelength bands, improving overall light absorption efficiency across the visible spectrum without requiring the entire device to be complex
Solution Approach 2:
The diffraction patterns are positioned at a specific depth within the photodetection layer (between the second surface and the first well), creating a three-dimensional structure. This dimensional arrangement allows incident light to be diffracted at specific angles and depths, enhancing absorption in the red and near-infrared bands while maintaining a relatively simple overall device structure
2Reliability
If diffraction patterns are positioned deeper in the photodetection layer to increase absorption length, then photon detection probability is improved, but manufacturing precision requirements increase
Solution Approach 1:
The pitch of the diffraction patterns is specifically optimized to be between 0.4 micrometers and 0.7 micrometers. This parameter optimization ensures high diffraction efficiency for red and near-infrared wavelengths while allowing the patterns to be positioned at an effective depth within the photodetection layer, balancing photon detection probability with manufacturability
Solution Approach 2:
The photodetection layer has non-uniform properties: the diffraction patterns are positioned in a specific region (between the second surface and the first well) rather than uniformly distributed. This local quality variation optimizes the absorption length for photons traveling through that specific region, improving detection probability without requiring uniform high-precision manufacturing throughout the entire layer
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The diffraction patterns increase the absorption length of light within the device, improving photon detection probability and efficiency, especially for wavelengths not well absorbed by the semiconductor substrate, thereby enhancing overall light detection capabilities.
Implementation Method 1
diffraction patterns positioned between the second surface and the first well, the diffraction patterns configured to receive incident light and diffract the incident light such that first-order diffracted light has a highest diffraction efficiency in a red or near-infrared wavelength band
Data Source
AI summary
Disclosed is a single photon detection device comprises a photodetection layer including a first surface and a second surface positioned opposite to each other. The photodetection layer comprises a first well having a first conductivity type, diffraction patterns positioned between the second surface and the first well, the diffraction patterns configured to receive incident light and diffract the incident light such that first-order diffracted light has a highest diffraction efficiency in a red or near-infrared wavelength band; a highly doped region positioned between the first surface and the first well and having a second conductivity type different from the first conductivity type, and a contact region electrically connected to the first well and having the first conductivity type.