Single Ridge N-P-N Diode Laser High Power Operation
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Solution Overview
Problem
Diode lasers are limited to approximately 1 watt in single-mode emitted power, preventing their direct application to directed energy and other important applications that require higher power levels, such as efficient combining of independent array elements to achieve a single-mode continuous wave source at 10 kilowatts or above.
Innovation Solution
A diode laser design featuring a passive pedestal layer structure and an active ridge layer structure with a p-contact and n-contacts, along with a continuous n-final-metal layer connecting the n-contacts, optimized through a method that systematically varies design parameters to enhance single-mode power and reduce optical loss, allowing for higher power output while maintaining single transverse mode operation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If conventional diode laser designs are used, then manufacturing simplicity is maintained, but single-mode power is limited to approximately 1 watt
Solution Approach 1:
The diode laser is divided into distinct functional layers: a passive pedestal layer structure and an active ridge layer structure. This segmentation allows each layer to be optimized independently for its specific function, enabling higher power operation while maintaining single-mode performance.
Solution Approach 2:
The invention transitions from a conventional planar structure to a vertically coupled three-dimensional architecture. The passive pedestal layer provides a large-area optical mode foundation, while the active ridge layer structure extends vertically to enhance light extraction and reduce optical loss, achieving high power in a compact footprint.
2Power
If laser length is extended to increase power output, then single-mode power increases, but optical loss increases
Solution Approach 1:
The passive pedestal layer structure acts as an intermediary between the active ridge layer and the substrate. It provides a low-loss optical pathway that guides light from the extended active region to the output facets, enabling longer laser cavities without proportionally increasing optical loss.
Solution Approach 2:
The laser employs composite material structures with different optical properties: the passive pedestal layer has optimized refractive index for low-loss guidance, while the active ridge layer contains quantum wells for efficient light generation. This composite approach allows extended length without proportional loss increase.
3Productivity
If conventional contact structures are used, then manufacturing simplicity is maintained, but current handling efficiency decreases at high power levels
Solution Approach 1:
The contact structure is segmented into multiple n-contacts positioned at different locations on the ridge structure, rather than using a single conventional contact. This segmentation distributes current injection across multiple points, improving current handling efficiency and reducing thermal effects at high power levels.
Solution Approach 2:
The contact architecture transitions from a planar two-dimensional layout to a three-dimensional structure where n-contacts are positioned on the ridge sides and connected via lateral metal layers that wrap around the ridge, enabling efficient current distribution in multiple spatial dimensions.
Data Source
AI summary
The present disclosure relates to a diode laser and a method for producing the same. In one embodiment, the diode laser, comprises a passive pedestal layer structure, an active ridge layer structure positioned over the passive pedestal layer structure, a p-contact contacting a top side of the active ridge layer structure, a first n-contact disposed on a first side of the active ridge layer structure, a second n-contact disposed on a second side of the active ridge layer structure and, an n-final-metal layer connecting the first n-contact metal and the second n-contact metal, wherein the n-final-metal layer is continuous over the active ridge layer structure.