Single-Wafer RGB LED Integration via Selective Deposition
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Solution Overview
Problem
Current methods for producing light sources with different emission wavelengths, such as red, green, and blue, are costly, time-consuming, and inefficient due to the need for separate substrates and complex processing steps, leading to strain and defects in LEDs.
Innovation Solution
The method involves natively forming LEDs with different emission wavelengths on the same substrate by adjusting parameters like porosity, In incorporation, and critical dimensions, and using techniques like selective deposition within dielectric openings to minimize strain and reduce processing steps.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If separate substrates are used for different wavelength LEDs, then manufacturing precision and quality may be maintained, but production cost increases and productivity decreases
Solution Approach 1:
The patent merges multiple LED growth processes onto a single substrate by creating distinct growth regions (first, second, and third regions) where different wavelength LEDs are grown simultaneously. This eliminates the need for separate substrates and subsequent assembly steps, directly reducing production cost and time while maintaining quality through controlled regional growth parameters.
Solution Approach 2:
The patent applies local quality by tailoring the composition and structure of semiconductor layers specifically in different regions of the substrate. Each region is optimized for its target wavelength through localized control of indium composition ratios and layer structures, enabling high-quality growth of different LED types on the same substrate without compromising individual LED performance.
2Productivity
If multiple LED types are integrated on one substrate, then productivity improves and cost decreases, but strain and defects increase
Solution Approach 1:
The patent segments the substrate into distinct growth regions with isolated semiconductor layer structures. Each region is independently configured with specific layer compositions and thicknesses, allowing strain management through regional optimization. This segmentation prevents strain propagation between different LED types while enabling high-density integration on a single substrate.
Solution Approach 2:
The patent employs parameter changes by systematically varying indium composition ratios, layer thicknesses, and growth conditions across different regions. These controlled parameter variations enable precise tuning of each LED type's properties while managing lattice mismatch and strain through compositional grading and optimized growth parameters.
3Manufacturing precision
If complex processing steps are used to achieve different wavelengths, then emission wavelength precision is maintained, but device complexity and manufacturing difficulty increase
Solution Approach 1:
The patent applies preliminary action by pre-configuring the substrate with multiple prepared growth regions before LED fabrication begins. Each region is pre-engineered with appropriate buffer layers and initial semiconductor structures optimized for its target wavelength, eliminating the need for complex post-growth modification steps and simplifying the overall manufacturing process.
Solution Approach 2:
The patent creates a universal substrate platform that can simultaneously produce multiple LED wavelength types through a single integrated growth process. The substrate and its regional structures are designed to serve multiple functions - supporting different indium compositions, accommodating various LED architectures, and enabling simultaneous fabrication of red, green, and blue LEDs - thereby reducing overall device and process complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces production costs, increases yield, and allows for precise tuning of emission wavelengths, overcoming challenges in providing high-quality LEDs with reduced thickness and minimized strain effects.
Implementation Method 1
selective deposition within dielectric openings to minimize strain and reduce processing steps
Implementation Method 2
a first active region having a first degree of relaxation, the second light source may include a second active region having a second degree of relaxation
Data Source
AI summary
Exemplary devices may include a substrate, a dielectric layer formed on the substrate, a first light source configured to emit first light characterized by a first wavelength, a second light source configured to emit second light characterized by a second wavelength different from the first wavelength, and a third light source configured to emit third light characterized by a third wavelength different from the first wavelength and the second wavelength. The first light source may be natively formed on a first region of the substrate and arranged within a first opening of the dielectric layer. The second light source may be natively formed on a second region of the substrate and arranged within a second opening of the dielectric layer. The third light source may be natively formed on a third region of the substrate and arranged within a third opening of the dielectric layer.