Singlet Fission Interlayer for Silicon Solar Cell Efficiency
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Solution Overview
Problem
Silicon solar cells are approaching their thermodynamic limit, leading to suboptimal harvesting of the solar spectrum due to excess energy loss from photons with energies above the bandgap, which limits their power conversion efficiency and increases costs.
Innovation Solution
A system comprising a substrate with an inorganic semiconductor and an interlayer of transition metal oxide, oxynitride, or nitride is used, with a layer that undergoes singlet exciton fission when exposed to electromagnetic radiation, allowing for energy transfer and charge separation to enhance efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If silicon solar cells are used to harvest solar energy, then power conversion efficiency is improved, but the thermodynamic limit of 29.1% is reached, preventing further efficiency improvements
Solution Approach 1:
The patent changes the energy state parameters of photons by introducing singlet exciton fission in the organic layer, which converts high-energy photons into multiple triplet excitons with lower energy, enabling multi-exciton generation and overcoming the single electron-hole pair limitation of conventional silicon solar cells
Solution Approach 2:
The patent introduces an organic interlayer with singlet fission capability as an intermediary between the silicon substrate and the incoming photons. This interlayer mediates the energy transfer process by absorbing photons, undergoing singlet exciton fission to generate triplet excitons, and then transferring these excitons to the silicon substrate, thereby enabling efficient harvesting of high-energy photons without exceeding the thermodynamic limit
2Productivity
If photons with energies above the bandgap are absorbed, then more solar spectrum is harvested, but excess energy is lost during thermalization to the band edge
Solution Approach 1:
The patent changes the energy distribution parameters by using singlet exciton fission to convert high-energy photons into multiple lower-energy triplet excitons, which then transfer to silicon. This parameter transformation allows the system to utilize the full solar spectrum while minimizing thermalization losses, as each high-energy photon generates multiple electron-hole pairs instead of losing excess energy as heat
Solution Approach 2:
The patent converts the previously harmful excess energy (which caused thermalization losses) into a beneficial resource by using singlet exciton fission to generate multiple triplet excitons from high-energy photons. The excess energy that would have been lost as heat is now utilized to create additional excitons, transforming the waste energy into useful electrical output
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables increased power conversion efficiency by facilitating triplet exciton transfer and electric field passivation, potentially doubling photocurrent and improving surface passivation, thus overcoming the Shockley-Queisser limit.
Implementation Method 1
the layer comprises a material that undergoes singlet exciton fission when exposed to electromagnetic radiation
Implementation Method 2
enables increased power conversion efficiency by facilitating triplet exciton transfer
Implementation Method 3
enables increased power conversion efficiency by facilitating triplet exciton transfer and electric field passivation
Data Source
AI summary
Embodiments related to interlayers (e.g., interlayers comprising a transition metal oxide, a transition metal oxynitride, and/or a transition metal nitride) and associated systems, devices (e.g., photovoltaic devices), and methods are disclosed. In some embodiments, a system for exciton transfer includes a substrate including an inorganic semiconductor. An interlayer may be disposed on the substrate, and a layer including a material that undergoes singlet exciton fission when exposed to electromagnetic radiation may be disposed on the interlayer. The interlayer may be disposed between the substrate and the layer. In some embodiments, a method for manufacturing a system for exciton transfer involves depositing an interlayer onto a substrate that includes an inorganic semiconductor. The method may also include depositing a layer including a material that undergoes singlet exciton fission when exposed to electromagnetic radiation onto the interlayer.


