Singulation Groove Separation for Dense Semiconductor Substrates

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Solution Overview

Problem

Current methods for separating semiconductor devices, such as slicing with a saw or laser, result in significant wasted space and increased processing time, especially for smaller devices.

Innovation Solution

The use of singulation grooves between semiconductor devices on a common substrate, which are then partially filled with brittle dielectric material and cracked to separate the devices, eliminating the need for slicing and reducing processing time.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If slicing with a saw or laser is used to separate semiconductor devices, then separation is achieved, but significant wasted space and increased processing time occur

Engineering Contradiction:
Improveproduction efficiencyVSAvoidprocessing time
Core Design Contradiction:
ProductivityVSLoss of time

Solution Approach 1:

The method performs preliminary actions by forming singulation grooves and partially filling them with brittle dielectric material before the actual separation step. This preparation enables rapid separation through simple mechanical breaking rather than time-consuming slicing operations, thereby reducing processing time while maintaining high productivity

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The substrate is divided into individual semiconductor devices through pre-formed singulation grooves that create natural separation lines. This segmentation approach allows devices to be easily separated along predetermined paths without requiring extensive slicing, reducing both processing time and wasted space

Inventive Principle:
Principle #1Segmentation

2Productivity

If slicing with a saw or laser is used to separate semiconductor devices, then separation is achieved, but significant wasted space occurs

Engineering Contradiction:
Improvedevice density per substrateVSAvoidwasted space
Core Design Contradiction:
ProductivityVSArea of stationary object

Solution Approach 1:

Singulation grooves are formed in advance between adjacent semiconductor devices, creating precise separation paths that minimize the space required between devices. This preliminary structuring allows for tighter device spacing and reduces wasted substrate area compared to conventional slicing methods

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The substrate surface is segmented into discrete device regions by singulation grooves, allowing maximum utilization of substrate area. The grooves create narrow separation zones that minimize wasted space between devices, enabling higher device density per substrate

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method reduces wasted space and processing time, allowing for more efficient production of semiconductor devices by fitting more devices on a single substrate and streamlining the separation process.

Implementation Method 1

the singulation groove cracks and a separation is formed between the first semiconductor device and the second semiconductor device

Methodology Applied
Scientific EffectFracture: Fracture Mechanics

Data Source

PatentUS20250029878A1Methods for separating semiconductor devices using singulation grooves, and devices resulting from such methods
Publication Date: 2025.01.23 MICRON TECHNOLOGY INC
  • US20250029878A1 patent drawing
  • US20250029878A1 patent drawing
  • US20250029878A1 patent drawing

AI summary

A method of separating a semiconductor device from another semiconductor device using singulation grooves on a substrate is provided. The method includes providing a substrate with an upper surface and a back; forming a first semiconductor device on a first location on the upper surface; forming a second semiconductor device on a second location on the upper surface, such that a gap exists between the second semiconductor device and the first semiconductor device; forming a singulation groove on the upper surface that runs through the gap between the first and second semiconductor devices; partially filling an interior of the singulation groove with a brittle dielectric filler to form an air gap in the interior of the groove, and grinding to remove excess material from the back of the substrate, such that the singulation groove cracks and a separation is formed between the first semiconductor device and the second semiconductor device.