Sinker Contact Structures for Compact Semiconductor Devices
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The existing sinker contact structures in semiconductor devices require large spacing from trench contacts to avoid crystalline defects, limiting the miniaturization of semiconductor devices due to etch problems and slip-line formation during the manufacturing process.
Innovation Solution
The novel sinker contact structures are formed adjacent to the sidewalls of a trench ring, with an insulating material on the sidewalls and a conductive material within the trench, allowing for closer placement and reducing the need to etch through differently doped semiconductive materials, thereby avoiding slip-line defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If trench contacts and sinker contacts are spaced apart by a large distance to avoid etch problems and slip-lines, then manufacturing reliability is improved, but device area increases
Solution Approach 1:
The patent divides the contact structure into two distinct parts: trench contacts that do not extend through the buried layer, and sinker contacts that are formed separately in the top portion. This segmentation allows each contact type to be optimized independently, eliminating the need for large spacing while maintaining manufacturing reliability.
Solution Approach 2:
The patent transitions from a planar spacing approach to a vertical differentiation approach. By controlling the depth of trench contacts (stopping before penetrating the buried layer) and forming sinker contacts in the upper region, the solution uses vertical dimension control to resolve the spacing conflict, enabling closer horizontal placement without causing slip-lines.
2Area of stationary object
If trench contacts are placed close to sinker contacts to reduce device area, then area efficiency is improved, but crystalline defects such as slip-lines occur
Solution Approach 1:
The patent performs preliminary action by forming trench contacts that deliberately stop before penetrating the buried layer. This preliminary stopping point is strategically chosen to prevent the formation of slip-lines during subsequent processing, allowing close placement of sinker contacts without compromising crystalline structure integrity.
Solution Approach 2:
The buried layer acts as an intermediary barrier between trench contacts and sinker contacts. By controlling trench contact depth to stop at or near the buried layer interface, the patent uses this intermediate structure to prevent direct interaction between the two contact types that would cause slip-lines, enabling closer spacing while maintaining manufacturing precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables more compact and area-efficient sinker contact structures, allowing for reduced trench ring sizes and closer placement of adjacent devices, enhancing the density and performance of semiconductor devices without generating slip-lines during the anneal process.
Implementation Method 1
An insulating material is disposed on the sidewalls of the trench
Implementation Method 2
annealing or heating the substrate to drive the dopant deeper into the substrate
Data Source
AI summary
Semiconductor devices and methods of manufacture thereof are disclosed. In one embodiment, a semiconductor device includes a workpiece having a buried layer disposed beneath a top portion thereof. A trench is disposed in the workpiece extending at least through the buried layer. At least one sinker contact is disposed in the top portion of the workpiece. The at least one sinker contact is proximate sidewalls of at least a portion of the trench and is adjacent the buried layer. An insulating material is disposed on the sidewalls of the trench. A conductive material is disposed within the trench and is coupled to a lower portion of the workpiece.