Spark Plasma Sintered Edge Ring for Cryogenic Plasma Erosion
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Solution Overview
Problem
Cryogenic plasma processing significantly reduces the lifespan of components like edge rings in plasma processing chambers, leading to increased downtime, higher costs, and degraded system performance.
Innovation Solution
The use of a spark plasma sintered body made from doped silicon carbide or carbide powders, with specific dopants such as aluminum, yttrium, tungsten, or boron carbide, to create components for plasma processing chambers that are more resistant to erosion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If CVD-produced pure SiC is used for edge rings, then the manufacturing process is established and material properties are consistent, but the component lifetime in cryogenic plasma processing is insufficient
Solution Approach 1:
The patent uses composite materials by doping SiC with Al, Y, W, Ta, WC, or TaC to create a material with enhanced etch resistance and durability for cryogenic plasma processing, directly addressing the insufficient lifetime of pure SiC components
Solution Approach 2:
The patent changes the material composition parameters by introducing specific dopants at controlled concentrations (e.g., Al: 1-30 at%, Y: 1-20 at%, W: 1-15 at%) to optimize the etch resistance and lifetime of the edge ring for cryogenic plasma processing
2Manufacturing precision
If cryogenic plasma processing is used, then processing precision and etch quality are improved, but component lifetime is reduced to one-fourth to one-fifth of non-cryogenic processing
Solution Approach 1:
The patent modifies the material composition parameters by doping SiC with specific elements (Al, Y, W, Ta, WC, TaC) to enhance etch resistance, allowing the component to withstand the harsh cryogenic plasma environment while maintaining processing precision
Solution Approach 2:
The patent applies local quality by concentrating dopant elements at the plasma-facing surface of the edge ring where etching occurs most intensely, providing localized enhancement of etch resistance where it is most needed
3Productivity
If more aggressive plasma chemistries are used, then processing capability and etch rate are improved, but component lifetime requirements become more stringent
Solution Approach 1:
The patent employs composite materials with dopants such as Al, Y, W, Ta, WC, and TaC to create a SiC-based material that maintains high etch resistance even under aggressive plasma chemistries, enabling both high productivity and extended component lifetime
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The spark plasma sintered components exhibit enhanced etch resistance and durability, significantly extending their lifespan and reducing the need for frequent replacements, thereby improving system performance and reducing operational costs.
Implementation Method 1
A component body is formed by spark plasma sintering the sintering powder
Data Source
AI summary
An apparatus for plasma processing a wafer at cryogenic temperatures is provided. A wafer support is adapted to support a wafer within a plasma processing chamber. A gas source provides gas to the plasma processing chamber. A cooling system provides cooling the wafer support. A component comprises a spark plasma sintered body comprising a sintering powder comprising at least one of a doped silicon carbide powder, wherein a dopant is at least one of aluminum (Al), yttrium (Y), tungsten (W), tantalum (Ta), tungsten carbide (WC), tantalum carbide (TaC), and aluminum-silicon carbide (AlSiC), or a doped carbide, wherein the carbide is at least one of boron carbide (B4C), WC, or TaC and wherein a dopant is at least one of B, W, molybdenum (Mo), Al, and Ta, or pure B4C, WC, TaC, W, or Mo.