Sintering Device Using Plasma and Oxygen Pump
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Solution Overview
Problem
Conventional methods for forming electronic circuits using metal fine particles often require hazardous gases for low-temperature sintering, leading to environmental concerns and limited grain growth or crystal growth of metal materials, which affects the conductivity of the resulting films or wiring.
Innovation Solution
A sintering device that uses an airtight container with an oxygen pump and plasma generation means to create a low-oxygen atmosphere, allowing for grain or crystal growth of metal fine particles at low temperatures without the need for hazardous gases, utilizing atmospheric pressure plasma and a circulation system to control oxygen partial pressure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional heat treatment methods are used in air atmosphere, then organic matters can be decomposed, but copper oxide forms which is an insulator and prevents good electrical conductivity
Solution Approach 1:
The patent applies inert atmosphere by introducing nitrogen gas into the heating chamber to prevent copper oxidation during heat treatment. The nitrogen atmosphere replaces air, eliminating oxygen that would otherwise react with copper to form insulating copper oxide, thereby maintaining electrical conductivity while allowing organic matter decomposition.
2Ease of manufacture
If heat treatment temperature is lowered to 180°C or lower, then cost-effective plastics like PET can be used, but grain growth or crystal growth of metal material is insufficient
Solution Approach 1:
The patent changes the atmospheric parameters (introducing nitrogen and controlling oxygen partial pressure) to enable effective grain growth and crystal growth at lower temperatures. This parameter change in atmosphere composition allows metal particles to sinter and grow grains properly even at 180°C or lower, maintaining manufacturing precision while using cost-effective substrates.
3Temperature
If hazardous gases like hydrogen are used for reducing atmosphere, then low-temperature sintering can be achieved, but environmental disposal treatment is required
Solution Approach 1:
The patent replaces hazardous gases like hydrogen with nitrogen, which is inexpensive and environmentally benign. Nitrogen can be safely vented without requiring special disposal treatment, eliminating the harmful factors associated with hazardous gas usage while maintaining the ability to achieve low-temperature sintering through controlled atmosphere.
4Adaptability or versatility
If plastic substrates with low heat resistance are used, then flexibility is improved, but heat treatment temperature must be lowered below 200°C
Solution Approach 1:
The patent changes the atmospheric parameters (nitrogen introduction and oxygen partial pressure control) to enable effective heat treatment at lower temperatures. This allows the use of flexible plastic substrates with low heat resistance while still achieving proper metal particle sintering and organic matter decomposition through the modified atmosphere conditions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the formation of films or wiring with low resistivity while eliminating the need for disposal treatments of hazardous gases, achieving efficient processing of metal fine particles at temperatures as low as 180°C or lower, thereby reducing environmental impact and improving material conductivity.
Implementation Method 1
an oxygen pump (2) for extracting oxygen molecules from a gas discharged from the airtight container (1)
Implementation Method 2
a plasma generation means (4) present inside the airtight container (1) for converting the gas returned from the circulation means (3) into plasma and exposing the specimen (6) thereto
Implementation Method 3
a circulation means (3) for returning the gas into the airtight container (1)
Implementation Method 4
an atmospheric pressure plasma unit that utilizes a total pressure of the gas returned from the circulation means and converted into plasma between 0.1 atm or more and less than 10 atm in terms of absolute pressure
Data Source
Figure 1~2
Figure 3~4
Figure 5~6
AI summary
A processing device for a metal material, comprising: an airtight container for housing a specimen thereinside; an oxygen pump for extracting oxygen molecules from a gas discharged from the airtight container; a circulation means for returning the gas into the airtight container; and a plasma generation means present inside the airtight container for converting the gas returned from the circulation means into plasma and exposing the specimen thereto.