SiNx Nanopore Formation via High pH Dielectric Breakdown
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Solution Overview
Problem
Existing methods struggle to stably form a single nanopore on a SiNx membrane with high dielectric breakdown withstand voltage using dielectric breakdown, often resulting in multiple pores or no pores being formed.
Innovation Solution
A nanopore forming method involving a SiNx film with a composition ratio of 1<x<4/3, where at least one of the aqueous solutions has a pH of 10 or more, and applying voltage to form a single nanopore through dielectric breakdown.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a high dielectric breakdown withstand voltage membrane is used to prevent membrane breakdown during measurement, then reliability is improved, but it becomes difficult to form a single nanopore stably through dielectric breakdown
Solution Approach 1:
The patent changes the pH parameter of the aqueous solution to pH 10 or higher, which fundamentally alters the dielectric breakdown characteristics of the SiNx membrane. This parameter change enables controlled single nanopore formation on membranes with high dielectric breakdown withstand voltage, resolving the contradiction between reliability and manufacturing precision.
2Productivity
If conventional dielectric breakdown methods are applied to high withstand voltage membranes, then nanopore formation is attempted, but multiple pores or no pores are formed instead of a single stable nanopore
Solution Approach 1:
By changing the pH parameter to 10 or higher, the patent achieves both high productivity (successful nanopore formation) and high manufacturing precision (single nanopore formation accuracy) on membranes with high dielectric breakdown withstand voltage, resolving the contradiction between these two features.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method allows for the stable formation of a single nanopore with high dielectric breakdown withstand voltage, suitable for nanopore measurement, reducing the risk of membrane breakdown and improving detection accuracy.
Implementation Method 1
a method of forming a nanopore by processing a semiconductor substrate or a semiconductor material by a semiconductor process has attracted attention... PTL 1 and NPLs 2 to 4 disclose nanopore forming methods utilizing dielectric breakdown of a membrane... When the current value between the electrodes rises sharply (the membrane breaks down)
Implementation Method 2
The SiNx film has a composition ratio of 1<x<4/3, where at least one of the aqueous solutions has a pH of 10 or more, and applying voltage to form a single nanopore through dielectric breakdown
Data Source
AI summary
Provided is a technique for stably forming a single nanopore by dielectric breakdown for a membrane having a high dielectric breakdown withstand voltage. In the nanopore forming method of the present disclosure, a SiNx film is placed between the first aqueous solution and the second aqueous solution, the first electrode is brought into contact with the first aqueous solution, and the second electrode is brought into contact with the second aqueous solution, and a voltage is applied to the first electrode and the second electrode. The SiNx film has a composition ratio of 1<x<4/3. At least any one of the first aqueous solution and the second aqueous solution has the pH of 10 or more.