SiO2 Diffusion Barrier in Optoelectronic Components
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Solution Overview
Problem
Copper from leadframe sections in optoelectronic components can diffuse through potting material and reach the p-n junction of semiconductor chips, causing degradation.
Innovation Solution
An optoelectronic component design featuring a housing with an electrically conductive first contact section, an optoelectronic semiconductor chip, and layers of silicone, SiO2, and a third layer, where the SiO2 layer acts as a diffusion barrier to prevent copper diffusion, formed by converting part of the silicone layer using oxidation or plasma treatment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If copper leadframe sections are used for electrical contact, then electrical conductivity is improved, but copper diffusion through potting material to the p-n junction causes semiconductor chip degradation
Solution Approach 1:
A diffusion barrier layer is introduced as an intermediary between the copper leadframe section and the semiconductor chip. This barrier layer prevents copper atoms from diffusing through the potting material to the p-n junction, while still allowing the electrical function to be maintained through the leadframe structure.
Solution Approach 2:
The diffusion barrier layer is integrated into the potting material structure itself, allowing the potting material to serve dual functions: providing mechanical support and electrical insulation while simultaneously preventing copper diffusion. This eliminates the need for separate barrier structures.
2Reliability
If a diffusion barrier layer is added to prevent copper diffusion, then semiconductor chip reliability is improved, but device structure and manufacturing complexity increase
Solution Approach 1:
The diffusion barrier layer is merged with the potting material, combining the encapsulation function and the diffusion barrier function into a single integrated structure. This reduces the number of separate components and simplifies the overall device architecture.
Solution Approach 2:
The patent employs composite material structures where the potting material is combined with diffusion barrier properties. This creates a multi-functional material system that provides both mechanical encapsulation and chemical diffusion protection simultaneously.
3Reliability
If multiple layers are added to the housing structure, then protection against copper diffusion is improved, but manufacturing time and process complexity increase
Solution Approach 1:
The diffusion barrier layer is incorporated into the potting material before or during the encapsulation process, rather than being added as a separate subsequent step. This preliminary integration reduces the number of discrete manufacturing steps and improves production efficiency.
Solution Approach 2:
The potting material is designed to perform multiple functions simultaneously: structural support, electrical insulation, mechanical protection, and copper diffusion barrier. This multi-functionality reduces the need for additional specialized components and simplifies the manufacturing process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The SiO2 layer effectively reduces or prevents copper diffusion to the p-n junction, minimizing semiconductor chip degradation and maintaining high electrical conductivity of the first contact section.
Implementation Method 1
A second layer comprising SiO2 is arranged at a surface of the first layer... the second layer has a thickness of 10 nm to 1 μm... the second layer comprising SiO2 can be a diffusion barrier. In particular, the second layer comprising SiO2 can act as a diffusion barrier for copper.
Implementation Method 2
forming a second layer including SiO2 at a surface of the first layer, wherein forming the second layer is carried out by converting a part of the first layer
Implementation Method 3
The diffused copper can bring about a degradation of the optoelectronic semiconductor chip... converting a part of the first layer
Data Source
AI summary
An optoelectronic component includes a housing having an electrically conductive first contact section, and an optoelectronic semiconductor chip arranged on the first contact section, wherein the optoelectronic semiconductor chip and the first contact section are at least partly covered by a first layer including a silicone, a second layer including SiO2 is arranged at a surface of the first layer, the second layer has a thickness of 10 nm to 1 μm, and a third layer is arranged above the second layer.