SiO2 Interface Formation Using OH Radicals for Low-Defect Thin Films
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Solution Overview
Problem
Current semiconductor thin film deposition technologies face issues such as non-uniformity of thin film thickness, poor deposition of high aspect ratio contact holes, low step coverage, high defect density at interfaces, and impurity generation during the deposition process, which affect the electrical properties and yield of semiconductor devices.
Innovation Solution
The method involves using high-density radicals, specifically OH radicals, to permeate into the interface during heat treatment, inducing permeation and substitution reactions, and forming a SiO2 thin film through annealing, which enhances bonding strength and reduces impurities by performing homogeneous chemical bonding with the interface.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional CVD or ALD is used to deposit insulating film on silicon substrate, then the deposition process is simple and fast, but the interface defect density is high and bonding strength is weak
Solution Approach 1:
The patent applies preliminary action by performing surface oxidation on the silicon substrate before depositing the insulating film. This pre-treatment creates a high-quality interface with lower defect density, and the subsequent annealing process further improves interface properties. The preliminary oxidation step prepares the substrate surface to reduce interfacial defects before the main deposition process.
Solution Approach 2:
The patent changes physical and chemical parameters by introducing annealing treatment with specific gas atmospheres (O2, H2O, or N2) at controlled temperatures. This parameter change transforms the interface properties through thermal diffusion and chemical reactions, reducing defect density and improving bonding strength between the substrate and insulating film.
2Reliability
If annealing is performed to reduce interface defects and improve bonding, then interface quality improves, but additional process time and complexity are required
Solution Approach 1:
The annealing process serves multiple functions simultaneously: it reduces interface defect density, improves bonding strength, and can control the thickness of the oxidized layer. By using a single annealing step with appropriate gas selection (O2, H2O, or N2), the process achieves multiple objectives that would otherwise require separate treatment steps.
Solution Approach 2:
The patent controls process complexity by systematically varying annealing parameters (temperature, time, gas atmosphere) to achieve desired interface properties. By establishing clear parameter ranges and gas selection criteria, the method provides a controlled approach that balances process complexity with interface quality improvement.
3Reliability
If oxidation is performed first to create SiO2 layer, then interface defect density is reduced, but physical defects still exist between SiO2 and insulating film
Solution Approach 1:
The patent applies continuous useful action by performing sequential treatments (oxidation followed by annealing) without interrupting the interface improvement process. The annealing step continuously acts on the interface to reduce both interfacial and physical defects, ensuring thorough treatment of the SiO2-insulating film interface to eliminate residual defects.
Solution Approach 2:
The patent uses parameter changes in the annealing process (temperature, gas atmosphere, time) to specifically target and reduce physical defects at the SiO2-insulating film interface. By adjusting these parameters, the process transforms the interface structure to eliminate voids and improve adhesion between layers.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in a film with low defect density and high density, improving the bonding strength between the substrate and insulating film, reducing impurities, and allowing for the adjustment of SiO2 thin film thickness, thereby addressing the limitations of existing technologies.
Implementation Method 1
the SiO2 thin film may be formed as the OH radicals permeate into the insulating film and reacts with silicon included in the silicon substrate
Implementation Method 2
forming an SiO2 thin film between the silicon substrate and the insulating film by performing annealing using OH radicals on the insulating film
Data Source
AI summary
According to one embodiment, a method of forming an oxide film by using a deposition apparatus includes depositing an insulating film on a silicon substrate, and forming an SiO2 thin film between the silicon substrate and the insulating film by performing annealing using OH radicals on the insulating film by using the deposition apparatus.