SiOCN Layer Formation Using Dual Carbon Precursors
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Solution Overview
Problem
Existing semiconductor technologies face challenges in forming minute patterns using materials that are sensitive to high temperatures, necessitating a low-temperature process for forming semiconductor devices with desired physical properties such as etching resistance and electrical characteristics.
Innovation Solution
A method of forming a SiOCN material layer by providing a substrate with silicon, oxygen, and carbon precursors, where the carbon precursors can be different materials, and nitrogen reactants, all introduced in specific sequences and combinations to achieve a material layer with controlled carbon and oxygen content, suitable for semiconductor devices, using plasma-enhanced atomic layer deposition at temperatures of 600° C or less.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If high temperature process is used, then etching resistance is improved, but material sensitivity to high temperatures causes problems in pattern formation
Solution Approach 1:
The patent changes the chemical composition parameters of the dielectric layer by incorporating nitrogen and carbon elements to form SiOCN material. This compositional parameter change enables the material to achieve high etching resistance without requiring high processing temperatures, thus resolving the contradiction between etching resistance and temperature sensitivity
Solution Approach 2:
The patent creates a composite SiOCN dielectric material by combining silicon, oxygen, carbon, and nitrogen elements. This composite material structure provides both the thermal stability needed for low-temperature processing and the etching resistance typically achieved only at high temperatures, thereby resolving the technical contradiction
2Temperature
If low temperature process is used, then material sensitivity is reduced, but etching resistance deteriorates
Solution Approach 1:
The patent modifies the chemical composition parameters by introducing nitrogen and carbon precursors into the silicon oxide matrix. This parameter change creates a SiOCN material with enhanced etching resistance that can be deposited at low temperatures (600°C or less), thus resolving the contradiction between low temperature processing and adequate etching resistance
3Device complexity
If single carbon precursor is used, then process complexity is reduced, but material layer composition control is insufficient
Solution Approach 1:
The patent segments the carbon source provision into two distinct steps using two different carbon precursors. The first carbon precursor is introduced during silicon precursor deposition, and the second carbon precursor is introduced during oxygen reactant deposition. This segmented approach provides precise control over carbon content and distribution in the SiOCN layer while maintaining manageable process complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enables the formation of semiconductor devices with improved etching resistance and electrical characteristics, achieving a dielectric constant within specific ranges and maintaining high tolerance to etching even at low temperatures, thus addressing the limitations of high-temperature sensitivity in pattern formation.
Implementation Method 1
using plasma-enhanced atomic layer deposition at temperatures of 600° C or less
Data Source
AI summary
A method of forming a SiOCN material layer, a material layer stack, a semiconductor device, a method of fabricating a semiconductor device, and a deposition apparatus, the method of forming a SiOCN material layer including providing a substrate; providing a silicon precursor onto the substrate; providing an oxygen reactant onto the substrate; providing a first carbon precursor onto the substrate; providing a second carbon precursor onto the substrate; and providing a nitrogen reactant onto the substrate, wherein the first carbon precursor and the second carbon precursor are different materials.