SiOCN Material Layer Low-Temperature Etching Resistance
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Solution Overview
Problem
Existing material layers used in semiconductor devices face challenges in achieving high etching resistance and good electrical characteristics, particularly when formed at low temperatures, due to residual precursor components and temperature susceptibility.
Innovation Solution
A method for forming a SiOCN material layer with a low halogen element content of 0.35 atom % or less, using a sequential supply of silicon, carbon, oxygen, nitrogen, and hydrogen sources in a plasma-enhanced atomic layer deposition process, which enhances etching resistance and electrical properties while allowing for low-temperature processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a material layer is formed at low temperature, then fabrication cost and energy consumption are reduced, but etching resistance and electrical characteristics are degraded
Solution Approach 1:
The patent changes the chemical composition parameters of the material layer by controlling the sequential supply of silicon, carbon, oxygen, and nitrogen sources during deposition. This results in a SiOCN material layer with specific compositional ratios that provide high etching resistance and good electrical characteristics even when formed at low temperatures (400-700°C), thus resolving the contradiction between low formation temperature and high etching resistance
Solution Approach 2:
The patent creates a composite SiOCN material layer by combining silicon, oxygen, carbon, and nitrogen elements in specific proportions. This composite material structure achieves superior etching resistance and electrical properties compared to conventional single-material layers, allowing low-temperature formation while maintaining high reliability
2Temperature
If a material layer is formed at low temperature, then fabrication cost and energy consumption are reduced, but electrical characteristics are degraded
Solution Approach 1:
The patent optimizes the compositional parameters of the material layer by controlling the supply ratios and sequences of silicon, carbon, oxygen, and nitrogen precursors. This results in a SiOCN material layer with tailored electrical properties (dielectric constant, breakdown voltage) that meet device requirements even when deposited at low temperatures, resolving the contradiction between low formation temperature and good electrical characteristics
3Device complexity
If conventional material layers are used, then fabrication process is simple, but etching resistance is insufficient for minute patterns
Solution Approach 1:
The patent segments the deposition process into sequential steps where silicon, carbon, oxygen, and nitrogen sources are supplied in a specific sequence. This segmented approach allows precise control over the material layer composition, achieving high etching resistance while keeping the overall fabrication process manageable through systematic process division
4Productivity
If residual precursor components remain in the material layer, then deposition process is faster, but etching resistance is degraded
Solution Approach 1:
The patent incorporates a preliminary heating treatment step after the sequential deposition of silicon, carbon, oxygen, and nitrogen sources. This preliminary action removes residual precursor components and organic contaminants from the material layer, ensuring high etching resistance while maintaining efficient deposition throughput through optimized process timing
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The SiOCN material layer exhibits improved etching resistance and electrical characteristics, enabling its use as a spacer in semiconductor devices with reduced halogen content and steric hindrance, facilitating low-temperature fabrication processes.
Implementation Method 1
using a sequential supply of silicon, carbon, oxygen, nitrogen, and hydrogen sources in a plasma-enhanced atomic layer deposition process
Data Source
AI summary
A material layer, a semiconductor device including the material layer, and methods of forming the material layer and the semiconductor device are provided herein. A method of forming a SiOCN material layer may include supplying a silicon source onto a substrate, supplying a carbon source onto the substrate, supplying an oxygen source onto the substrate, supplying a nitrogen source onto the substrate, and supplying hydrogen onto the substrate. When a material layer is formed according to a method of the present inventive concepts, a material layer having a high tolerance to wet etching and/or good electric characteristics may be formed, and may even be formed when the method is performed at a low temperature.