SiOCN Layer Deposition for Low-Temperature Wet Etch Resistance
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Solution Overview
Problem
Existing silicon nitride films exhibit high wet etch rates and require high deposition temperatures, which are unsuitable for certain applications, necessitating improved methods for forming structures with better etch resistance.
Innovation Solution
A method involving thermal cyclic deposition, such as atomic layer deposition (ALD), is used to form a SiOCN layer on a substrate at relatively low temperatures (300° C. to 600° C.) and pressures (0.5 to 50 Torr), using specific silicon and carbon precursors, to achieve desired etch-resistant properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If LPCVD techniques are used to deposit silicon nitride films with low wet etch rates, then wet etch resistance is improved, but deposition temperature becomes too high for some applications
Solution Approach 1:
The patent changes the compositional parameters of the silicon nitride film by incorporating oxygen and carbon to create SiOCN films with varying ratios. This compositional modification allows the film to achieve desired wet etch resistance at lower deposition temperatures (300-600°C) compared to traditional LPCVD silicon nitride which requires higher temperatures
Solution Approach 2:
The patent creates a composite material SiOCN by combining silicon, oxygen, carbon, and nitrogen elements. This composite approach allows tuning of film properties including wet etch resistance and deposition temperature characteristics, enabling the material to perform adequately at lower temperatures while maintaining necessary etch resistance
2Temperature
If PECVD techniques are used to deposit silicon nitride films, then deposition temperature is reduced, but wet etch rate increases
Solution Approach 1:
The patent modifies the chemical composition parameters by incorporating oxygen and carbon into the silicon nitride matrix to form SiOCN films. This compositional change allows the films deposited at lower PECVD temperatures to achieve improved wet etch resistance compared to conventional silicon nitride films
Solution Approach 2:
The patent introduces specific local compositional variations within the film structure by controlling the incorporation of oxygen and carbon at different stages of deposition. This creates regions with different etch resistance properties, allowing the overall film to achieve the desired balance between low temperature deposition and adequate wet etch resistance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The SiOCN layer provides improved wet etch resistance and can be used in spacer formation and oxide etching, offering reduced etch rates and compatibility with a wider range of applications.
Implementation Method 1
using a thermal cyclic deposition process, depositing a layer comprising SiOCN on the surface of the substrate. In accordance with various aspects, the step of depositing includes atomic layer deposition (ALD).
Data Source
AI summary
A method for forming a layer comprising SiOCN on a substrate is disclosed. An exemplary method includes thermally depositing the layer comprising SiOCN on a surface of the substrate. The layer comprising SiOCN can be used for various applications, including spacers, etch stop layers, and etch resistant layers.