SIP Structure Ground Wire for ESD Noise Release
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Solution Overview
Problem
Rewritable non-volatile memory modules, such as SD cards, experience electrostatic discharge interference due to conductive openings after being cut from a supporting bracket, which can cause errors or damage during use.
Innovation Solution
A system in package (SIP) structure with a first and second layout layer, where a wire is connected between the opening and a pad configured to couple to ground voltage, allowing electrostatic noise to be released, thereby reducing interference.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If SD cards are cut from the supporting bracket, then individual SD cards can be used independently, but conductive openings remain that cause electrostatic discharge interference
Solution Approach 1:
The patent extracts the harmful electrostatic discharge pathway by removing the conductive connection between the opening and the SD card circuitry. The isolation structure physically separates the opening from the card's electrical components, preventing ESD from affecting the card while maintaining the opening's presence for manufacturing purposes.
Solution Approach 2:
The patent introduces an intermediary isolation structure between the opening and the SD card circuitry. This intermediate layer acts as a barrier that blocks electrostatic discharge while allowing the opening to remain functional for its original purpose, thus mediating between the conflicting requirements.
2Productivity
If electroplating process is performed on multiple SD cards simultaneously, then production efficiency increases, but electrostatic discharge interference affects all cards
Solution Approach 1:
The patent segments the electrical isolation for each SD card individually. Each card has its own isolation structure surrounding the opening, creating separate protective zones. This allows simultaneous electroplating of multiple cards while each card's circuitry is independently protected from ESD through its dedicated isolation barrier.
3Ease of manufacture
If openings are left in SD cards after cutting, then manufacturing process is simplified, but electrostatic discharge causes errors and damage
Solution Approach 1:
The patent applies local quality by providing electrostatic discharge protection only in the specific region where the opening is located, rather than modifying the entire card structure. The isolation structure is localized around the opening, maintaining manufacturing simplicity while providing targeted protection against ESD at the problematic location.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The implementation effectively reduces electrostatic discharge interference by releasing noise through the wire to the ground voltage, minimizing errors and damage to the memory storage device.
Implementation Method 1
a wire, configured to couple between the opening and the pad... allowing electrostatic noise to be released
Data Source
AI summary
A system in package (SIP) structure, an electroplating module thereof and a memory storage device are provided. The SIP structure includes a first layout layer, a second layout layer and a rewritable non-volatile memory module. The first layout layer includes a first pad and a wire. The first pad is close to a first side of the first layout layer, and the first pad is configured to couple to a ground voltage. One terminal of the wire is coupled to the first pad, and another terminal of the wire is coupled to an opening of the SIP structure, wherein the opening is located at a second side of the first layout layer opposite to the first side, and the opening is configured to couple to an external voltage.